اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدThe Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films
143
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
This paper has been withdrawn by the author due to journal requirement.
قيم البحث
اقرأ أيضاً
Nematic superconductivity is a novel class of superconductivity characterized by spontaneous rotational-symmetry breaking in the superconducting gap amplitude and/or Cooper-pair spins with respect to the underlying lattice symmetry. Doped Bi2Se3 supe
rconductors, such as CuxBi2Se3, SrxBi2Se3, and NbxBi2Se3, are considered as candidates for nematic superconductors, in addition to the anticipated topological superconductivity. Recently, various bulk probes, such as nuclear magnetic resonance, specific heat, magnetotransport, magnetic torque, and magnetization, have consistently revealed two-fold symmetric behavior in their in-plane magnetic-field-direction dependence, although the underlying crystal lattice possesses three-fold rotational symmetry. More recently, nematic superconductivity is directly visualized using scanning tunneling microscopy and spectroscopy. In this short review, we summarize the current researches on the nematic behavior in superconducting doped Bi2Se3 systems, and discuss issues and perspectives.
The pressure induced superconductivity and structural evolution for Bi2Se3 single crystal have been studied. The emergence of superconductivity with onset transition temperature (Tc) about 4.4K is observed around 12GPa. Tc increases rapidly to the hi
ghest 8.5K at 16GPa, decreases to 6.5K at 21GPa, then keep almost constant. It is found that Tc versus pressure is closely related to the carrier density which increases by more than two orders of magnitude from 2GPa to 23GPa. High pressure synchrotron radiation measurements reveal structure transitions occur around 12GPa, 20GPa, and above 29GPa, respectively. A phase diagram of superconductivity versus pressure is obtained.
Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows weak anis
otropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 {AA} and Xi_c = 10.2 {AA}. The lower critical field and zero temperature penetration depth Lambda(0) are estimated to be 0.35 mT and 1550 nm respectively. Hall and Seebeck measurements confirm the dominance of electronic conduction and the carrier concentration is surprisingly low (n = 1.85 x 10^19 cm-3) at 10 K indicating possibility of unconventional superconductivity.
The observation of superconductivity in the layered transition metal oxide NaxCoO2 y H2O (K. Takada et al., Nature 422, 53 (2003)) has caused a tremendous upsurge of scientific interest due to its similarities and its differences to the copper based
high-temperature superconductors. Two years after the discovery, we report the fabrication of single-phase superconducting epitaxial thin films of Na0.3CoO2 x 1.3 D2O grown by pulsed laser deposition technique. This opens additional roads for experimental research exploring the superconducting state and the phase diagram of this unconventional material.
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains ch
allenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in-situ molecular beam epitaxy growth of Bi2Se3 films on SrTiO3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by 250 meV on a 3 nm thick Bi2Se3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
