اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدQuantum-correlated two-photon transitions to excitons in semiconductor quantum wells
196
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.
قيم البحث
اقرأ أيضاً
We have calculated the contribution of intersubband transitions to the third order optical nonlinear susceptibility, $chi^{(3)}(omega,omega,omega)$ for nonresonant as well as resonant third harmonic generation and $chi^{(3)}(omega,-omega,omega)$ for
nonlinear refraction and absorption. As examples, we consider InAs/AlSb and GaAs/GaAlAs quantum wells. The effects of finite barrier height, energy band nonparabolicity, and high carrier concentrations are included. It is shown that quantum confinement, rather than the band nonparabolicity, is responsible for high values of nonresonant $chi^{(3)}_{zzzz}$. Very high values of $chi^{(3)}_{zzzz}$ are obtained for third harmonic generation and two photon absorption for incident wavelength near 10.6 $mu$m. Intensity dependence of refractive index and of absorption co-efficient is also discussed for intensity well above the saturation intensity. Effective medium theory is used to incorporate the collective effects.
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominal
ly square QWs as well as with triangle-like QWs. Several quantum confined exciton states are experimentally observed as narrow exciton resonances with various profiles. A standard approach for the phenomenological analysis of the profiles is generalized by introducing of different phase shifts for the light waves reflected from the QWs at different exciton resonances. Perfect agreement of the phenomenological fit to the experimentally observed exciton spectra for high-quality structures allowed us to obtain reliable parameters of the exciton resonances including the exciton transition energies, the radiative broadenings, and the phase shifts. A direct numerical solution of Schr{o}dinger equation for the heavy-hole excitons in asymmetric QWs is used for microscopic modeling of the exciton resonances. Remarkable agreement with the experiment is achieved when the effect of indium segregation during the heterostructure growth is taken into account. The segregation results in a modification of the potential profile, in particular, in an asymmetry of the nominally square QWs.
We demonstrate the existence of a novel breather mode in the self-consistent electron dynamics of a semiconductor quantum well. A non-perturbative variational method based on quantum hydrodynamics is used to determine the salient features of the elec
tron breather mode. Numerical simulations of the time-dependent Wigner-Poisson or Hartree equations are shown to be in excellent agreement with our analytical results. For asymmetric quantum wells, a signature of the breather mode is observed in the dipole response, which can be detected by standard optical means.
We present a detailed investigation of excitonic absorption in $Zn_{0.69}Cd_{0.31}Se/ZnSe$ quantum wells under the application of a perpendicular magnetic field. The large energy separation between heavy- and light-hole excitons allows us to clearly
resolve and identify magneto-excitonic absorption resonant with the continuum edge of the 1S heavy-hole exciton. Experimental values of the exciton binding energy are compared with results of a theoretical model that includes the exciton-phonon interaction. The remarkable agreemeent found unambiguously indicates the predominant polaronic character of excitons in ZnSe-based heterostructures.
We theoretically study the coherent nonlinear response of electrons confined in semiconductor quantum wells under the effect of an electromagnetic radiation close to resonance with an intersubband transition. Our approach is based on the time-depende
nt Schrodinger-Poisson equation stemming from a Hartree description of Coulomb-interacting electrons. This equation is solved by standard numerical tools and the results are interpreted in terms of approximated analytical formulas. For growing intensity, we observe a red-shift of the effective resonance frequency due to the reduction of the electric dipole moment and the corresponding suppression of the depolarization shift. The competition between coherent nonlinearities and incoherent saturation effects is discussed. The strength of the resulting optical nonlinearity is estimated across different frequency ranges from Mid-IR to THz with an eye to on-going experiments on intersubband polariton condensation and speculative quantum optical applications such as single-photon emission.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
