اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدElectrochemical ferroelectric switching: The origin of polarization reversal in ultrathin films
82
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {bf 460}, 81 (2009)]. Based on first-principles calculations, we show that the system does not polarize unless charged defects or adsorbates form at the surface. We propose electrochemical processes as the most likely origin of this charge. The ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film. This, in turn, alters the band alignment at the bottom electrode interface, explaining the observed tunneling electroresistance. Our conclusions are supported by energetics calculated for varied electrochemical scenarios.
قيم البحث
اقرأ أيضاً
A long standing problem of domain switching process - how domains nucleate - is examined in ultrathin ferroelectric films. We demonstrate that the large depolarization fields in ultrathin films could significantly lower the nucleation energy barrier
(U*) to a level comparable to thermal energy (kBT), resulting in power-law like polarization decay behaviors. The Landauers paradox: U* is thermally insurmountable is not a critical issue in the polarization switching of ultrathin ferroelectric films. We empirically find a universal relation between the polarization decay behavior and U*/kBT.
Engraving trenches on the surfaces of ultrathin ferroelectric (FE) films and superlattices promises control over the orientation and direction of FE domain walls (DWs). Through exploiting the phenomenon of DW-surface trench (ST) parallel alignment, s
ystems where DWs are known for becoming electrical conductors could now become useful nanocircuits using only standard lithographical techniques. Despite this clear application, the microscopic mechanism responsible for the alignment phenomenon has remained elusive. Using ultrathin PbTiO$_3$ films as a model system, we explore this mechanism with large scale density functional theory simulations on as many as 5,136 atoms. Although we expect multiple contributing factors, we show that parallel DW-ST alignment can be well explained by this configuration giving rise to an arrangement of electric dipole moments which best restore polar continuity to the film. These moments preserve the polar texture of the pristine film, thus minimizing ST-induced depolarizing fields. Our simulations also support experimental observations of ST-induced negative strains which have been suggested to play a role in the alignment mechanism.
The ability to manipulate ferroelectrics at ultrafast speeds has long been an elusive target for materials research. Coherently exciting the ferroelectric mode with ultrashort optical pulses holds the promise to switch the ferroelectric polarization
on femtosecond timescale, two orders of magnitude faster compared to what is possible today with pulsed electric fields. Here, we report on the demonstration of ultrafast optical reversal of the ferroelectric polarization in LiNbO3. Rather than driving the ferroelectric mode directly, we couple to it indirectly by resonant excitation of an auxiliary high-frequency phonon mode with femtosecond mid-infrared pulses. Due to strong anharmonic coupling between these modes, the atoms are directionally displaced along the ferroelectric mode and the polarization is transiently reversed, as revealed by time-resolved, phase-sensitive second-harmonic generation. This reversal can be induced in both directions, a key pre-requisite for practical applications.
Spin-split two-dimensional electronic states have been observed on ultrathin Sn(001) films grown on InSb(001) substrates. Angle-resolved photoelectron spectroscopy (ARPES) performed on these films revealed Dirac-cone-like linear dispersion around the
$bar{Gamma}$ point of surface Brillouin zone, suggesting nearly massless electrons belonging to 2D surface states. The states disperse across a bandgap between bulk-like quantum well states in the films. Moreover, both circular dichroism of ARPES and spin-resolved ARPES studies show helical spin polarization of the Dirac-cone-like surface states, suggesting a topologically protected character as in a bulk topological insulator (TI). These results indicate that a quasi-3D TI phase can be realized in ultrathin films of zero-gap semiconductors.
Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far
have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit) to twelve layers (bulk limit) over a wide range of incident photon energy. The data show complex variations in magnitude and sign reversals, which are nevertheless well described by a theoretical calculation including all three photoemission mechanisms: dipole transition, surface photoemission, and spin-orbit coupling. The results establish the nontrivial connection between the spin-orbit texture and CD.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
