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The topological insulator Bi2Se3 shows a Raman scattering response related to topologically protected surface states amplified by a resonant interband transition. Most significantly this signal has a characteristic Lorentzian lineshape and spin-helical symmetry due to collision dominated scattering of Dirac states at the Fermi level E_F on bulk valence states. Its resonance energy, temperature and doping dependence points to a high selectivity of this process. Its scattering rate (Gamma=40 cm-1=5 meV) is comparable to earlier observations, e.g. in spin-polaron systems. Although the observation of topological surface states in Raman scattering is limited to resonance conditions, this study represents a quite clean case which is not polluted by symmetry forbidden contributions from the bulk
The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome via in-situ
We report crystal growth and Raman spectroscopy characterization of pure and mixed bulk topological insulators. The series comprises of both binary and ternary tetradymite topological insulators. We analyzed in detail the Raman peaks of vibrational m
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the top
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale po
Raman experiments on bulk FeSe revealed that the low-frequency part of $B_{1g}$ Raman response $R_{B_{1g}}$, which probes nematic fluctuations, rapidly decreases below the nematic transition at $T_n sim 85$K. Such behavior is usually associated with