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We consider a switching of the magnetic moment with an easy axis anisotropy from an up to a down direction under the influence of an external magnetic field. The driving field is applied parallel to the easy axis and is continuously swept from a positive to a negative value. In addition, a small constant perpendicular bias field is present. It is shown that while the driving field switches the moment in a conventional way, the perpendicular field creates an admixture of the precessional (ballistic) switching that speeds up the switching process. Precessional contribution produces a non-monotonic dependence of the switching time on the field sweep time with a minimum at a particular sweep time value. We derive an analytic expressions for the optimal point, and for the entire dependence of the switching time on the field sweep time. Our approximation is valid in a wide parameter range and can be used to engineer and optimize of the magnetic memory devices.
We consider a magnetic moment with an easy axis anisotropy energy, switched by an external field applied along this axis. Additional small, time-independent bias field is applied perpendicular to the axis. It is found that the magnets switching time
Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional swi
Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device applications. It has
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive.
We measured the low temperature specific heat of a sputtered $(Fe_{23AA}/Cr_{12AA})_{33}$ magnetic multilayer, as well as separate $1000AA$ thick Fe and Cr films. Magnetoresistance and magnetization measurements on the multilayer demonstrated antipar