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The spectral--kinetic characteristics of a ZnO:Ga single crystal upon excitation in the vacuum UV region have been studied. At a temperature of 8 K, the exciton luminescence line peaking at 3.356 eV has an extremely small half-width (7.2 meV) and a short decay time (360 ps). In the visible range, a wide luminescence band peaking at ~2.1 eV with a long luminescence time at 8 K and a decay time in the nanosecond range at 300 K is observed. The luminescence excitation spectra of ZnO:Ga have been measured in the range from 4 to 12.5 eV
The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence
Uniaxial hot pressing has been used to obtain ceramics based on zinc oxide, and their optical, x-ray-structure, luminescence, and scintillation characteristics have been studied. It is shown that, by changing the concentration of the dopant (Ga) and
We generalize and systematize basic experimental data on optical and luminescence properties of ZnO single crystals, thin films, powders, ceramics, and nanocrystals. We consider and study mechanisms by which two main emission bands occur, a short-wav
Diamond displays a large variety of luminescence centers which define its optical properties and can be either created or modified by irradiation. The main purpose of the present work is to study the radiation hardness of several of such centers in h
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu3+ ions doped into gallium nitride (GaN) was studied under optical and electrical excitation. For small pump fluences it was found that the excitation of Eu3+ ions