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The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.
Uniaxial hot pressing has been used to obtain ceramics based on zinc oxide, and their optical, x-ray-structure, luminescence, and scintillation characteristics have been studied. It is shown that, by changing the concentration of the dopant (Ga) and
The spectral--kinetic characteristics of a ZnO:Ga single crystal upon excitation in the vacuum UV region have been studied. At a temperature of 8 K, the exciton luminescence line peaking at 3.356 eV has an extremely small half-width (7.2 meV) and a s
ZnO-based scintillation ceramics for application in HENPA LENPA analyzers have been investigated. The following ceramic samples have been prepared: undoped ones (ZnO), an excess of zinc in stoichiometry (ZnO:Zn), doped with gallium (ZnO:Ga) and lithi
Ceramics ZnO:Zn of 20mm diameter and 1.6mm thickness with an optical transparency up to 0.33 in the visible region have been prepared by hot pressing technique. Scintillating and luminescent characteristics such as emission spectra, decay time, yield
Dielectric and magnetic properties of Eu0.5Ba0.25Sr0.25TiO3 are investigated between 10 K and 300 K in the frequency range from 10 Hz to 100 THz. A peak in permittivity revealed near 130 K and observed ferroelectric hysteresis loops prove the ferroel