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We have fabricated C-Ga-O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K, and indicates a transition to a superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T), and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C-W-Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures
In a recent paper Tettamanzi et al (2009 Nanotechnology bf{20} 465302) describe the fabrication of superconducting Nb nanowires using a focused ion beam. They interpret their conductivity data in the framework of thermal and quantum phase slips below
Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhi
We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths down to 20nm
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gall