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Superconducting transition in Nb nanowires fabricated using focused ion beam

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 نشر من قبل Giuseppe Carlo Tettamanzi Dr
 تاريخ النشر 2010
  مجال البحث فيزياء
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Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.



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In a recent paper Tettamanzi et al (2009 Nanotechnology bf{20} 465302) describe the fabrication of superconducting Nb nanowires using a focused ion beam. They interpret their conductivity data in the framework of thermal and quantum phase slips below $T_c$. In the following we will argue that their analysis is inappropriate and incomplete, leading to contradictory results. Instead, we propose an interpretation of the data within a SN proximity model.
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