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Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolarization of electron spins in the hyperfine field. The dependence of the electron spin signal on injector bias and applied field direction is modeled by a coupled drift-diffusion equation, including effective fields from both the electronic and nuclear polarizations. This approach is used to determine the electron spin polarization independently of the assumptions made in standard transport measurements. The extreme sensitivity of the electron spin dynamics to the nuclear spin polarization also facilitates the electrical detection of nuclear magnetic resonance.
Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted studies as
We investigate the injection of quasiparticle spin currents into a superconductor via spin pumping from an adjacent FM layer.$;$To this end, we use NbN/ch{Ni80Fe20}(Py)-heterostructures with a Pt spin sink layer and excite ferromagnetic resonance in
We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the to
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $delta$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferr