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The role of Coulomb disorder, either of extrinsic origin or introduced by dopant ions in undoped and lightly-doped cuprates, is studied. We demonstrate that charged surface defects in an insulator lead to a Gaussian broadening of the Angle-Resolved Photoemisson Spectroscopy (ARPES) lines. The effect is due to the long-range nature of the Coulomb interaction. A tiny surface concentration of defects about a fraction of one per cent is sufficient to explain the line broadening observed in Sr$_2$CuO$_2$Cl$_2$, La$_2$CuO$_{4}$, and Ca$_{2}$CuO$_{2}$Cl$_{2}$. Due to the Coulomb screening, the ARPES spectra evolve dramatically with doping, changing their shape from a broad Gaussian form to narrow Lorentzian ones. To understand the screening mechanism and the lineshape evolution in detail, we perform Hartree-Fock simulations with random positions of surface defects and dopant ions. To check validity of the model we calculate the Nuclear Quadrupole Resonance (NQR) lineshapes as a function of doping and reproduce the experimentally observed NQR spectra. Our study also indicates opening of a substantial Coulomb gap at the chemical potential. For a surface CuO$_2$ layer the value of the gap is of the order of 10 meV while in the bulk it is reduced to the value about a few meV.
The zero temperature localization of interacting electrons coupled to a two-dimensional quenched random potential, and constrained to move on a fluctuating one-dimensional string embedded in the disordered plane, is studied using a perturbative renor
The relaxations of conductivity have been studied in the glassy regime of a strongly disordered two-dimensional electron system in Si after a temporary change of carrier density during the waiting time t_w. Two types of response have been observed: a
Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration $N sim 10^{19}$ cm$^{-3}$
Impurities, defects, and other types of imperfections are ubiquitous in realistic quantum many-body systems and essentially unavoidable in solid state materials. Often, such random disorder is viewed purely negatively as it is believed to prevent int
We investigate the ground-state phase diagram of the spinless Haldane-Hubbard model in the presence of quenched disorder, contrasting results obtained from both exact diagonalization as well as density matrix renormalization group, applied to a honey