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We report experimental results of the effect of Ka-band microwave on the spin dynamics of electrons in a 2D electron system in a GaAs/Al0.35Ga0.65As heterostructure, via time-resolved Kerr rotation measurements. While the microwave reduces the transverse spin lifetime of the bulk GaAs when its frequency is close to the Zeeman splitting of the electrons in the magnetic field, it significantly increases that of electrons in the 2D electron system, from 745 ps to 1213 ps. Such a microwave-enhanced spin lifetime is ascribed to the microwave-induced electron scattering which leads to a motional narrowing of spins via DP mechanism.
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and phot
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of contin
In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with our origin
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, Dyakonov-Perel, and Bir-Aronov-Pikus mechanisms. Accurate
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution