اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpin lifetimes of electrons injected into GaAs and GaN
97
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, Dyakonov-Perel, and Bir-Aronov-Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature-dependence of the spin relaxation lifetime agrees well with measured values in GaAs. We further show that the spin lifetimes decrease rapidly with injected electrons energy and reach a local maximum at the longitudinal optical phonon energy. Our calculation predicts that electron spin lifetime in pure GaN is about 3 orders of magnitude longer than in GaAs at all temperatures, primarily as a result of the lower spin-orbit interaction and higher conduction band density of states.
قيم البحث
اقرأ أيضاً
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution
of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented.
In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with our origin
al result [Ivchenko and Kiselev, Sov. Phys. Semicond. 26, 827 (1992)] and readily conclude that ``the previous theory of the g factor in heterostructures is inadequate. We show here that the entire discrepancy can be tracked down to an additional contribution missing in the incomplete elimination procedure of Pfeffer and Zawadzki. This mistake equally affects their ``exact and approximate results. When the overlooked terms stemming from the nondiagonal Zeeman interaction between light hole and spin-orbit-split valence states are taken into account in the effective electron dispersion, the results of the both approaches applied to the three-level kp model become identical.
We report room temperature electrical detection of spin injection from a ferromagnetic insulator (YIG) into a ferromagnetic metal (Permalloy, Py). Non-equilibrium spins with both static and precessional spin polarizations are dynamically generated by
the ferromagnetic resonance of YIG magnetization, and electrically detected by Py as dc and ac spin currents, respectively. The dc spin current is electrically detected via the inverse spin Hall effect of Py, while the ac spin current is converted to a dc voltage via the spin rectification effect of Py which is resonantly enhanced by dynamic exchange interaction between the ac spin current and the Py magnetization. Our results reveal a new path for developing insulator spintronics, which is distinct from the prevalent but controversial approach of using Pt as the spin current detector.
The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the op
en 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The preferred defect is the rare-earth substituting Ga, for which case the rare-earth valency in intrinsic material is found to be trivalent in all cases except Ce and Pr in GaN. The 3+ --> 2+ f-level is found above the theoretical conduction band edge in all cases and within the experimental gap only for Eu, Tm and Yb in GaAs and for Eu in GaN. The exchange interaction of the rare-earth impurity with the states at both the valence band maximum and the conduction band minimum is weak, one to two orders of magnitude smaller than that of Mn impurities. Hence the coupling strength is insufficient to allow for ferromagnetic ordering of dilute impurities, except at very low temperatures.
The longest spin lifetimes in bulk n-GaAs exceed 100 ns for doping concentrations near the metal-insulator transition (J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998)). The respective electronic states have yet not been identified. We
therefore investigate the energy dependence of spin lifetimes in n-GaAs by time-resolved Kerr rotation. Spin lifetimes vary by three orders of magnitude as a function of energy when occupying donor and conduction band states. The longest spin lifetimes (>100 ns) are assigned to delocalized donor band states, while conduction band states exhibit shorter spin lifetimes. The occupation of localized donor band states is identified by short spin lifetimes (~300 ps) and a distinct Overhauser shift due to dynamic nuclear polarization.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
