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To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $mu$eV. To achieve photon entanglement, it is necessary to Cherry-pick a sample with extremely small FSS from a large number of samples, or to apply strong in-plane magnetic field. Using theoretical modeling of the fundamental causes of FSS in QDs, we predict that the intrinsic FSS of InAs/InP QDs is an order of magnitude smaller than that of InAs/GaAs dots, and better yet, their excitonic gap matches the 1.55 $mu$m fiber optic wavelength, therefore offer efficient on-demand entangled photon emitters for long distance quantum communication.
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 {mu}m are investigated by means of polarization- and time-resolved photoluminescence, as well as photolu
We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of ann
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fin
We derive a general relation between the fine structure splitting (FSS) and the exciton polarization angle of self-assembled quantum dots (QDs) under uniaxial stress. We show that the FSS lower bound under external stress can be predicted by the exci