اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدLarge Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier
184
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
A spin-tunnel-junction based on manganites, with La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO$_3$ (LMO) as insulating barrier, is here theoretically discussed using double exchange model Hamiltonians and numerical techniques. For an even number of LMO layers, the ground state is shown to have anti-parallel LSMO magnetic moments. This highly resistive, but fragile, state is easily destabilized by small magnetic fields, which orient the LSMO moments in the direction of the field. The magnetoresistance associated with this transition is very large, according to Monte Carlo and Density Matrix Renormalization Group studies. The influence of temperature, the case of an odd number of LMO layers, and the differences between LMO and SrTiO$_3$ as barriers are also addressed. General trends are discussed.
قيم البحث
اقرأ أيضاً
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an electric-field contr
olled antiferromagnetic (AFM) tunnel junction with structure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magnetic phase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volume effect. The transport properties of the proposed AFM tunnel junction have been investigated by employing first-principles calculations. Our results show that a magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoes MPT from a collinear AFM state to a non-collinear AFM state. Band structure analysis based on density functional calculations shows that the large TMR can be attributed to the joint effect of significant different Fermi surface of Mn3Pt at two AFM phases and the band symmetry filtering effect of the SrTiO3 tunnel barrier. In addition, other than single-crystalline tunnel barrier, we also discuss the robustness of the proposed magnetoresistance effect by considering amorphous AlOx barrier. Our results may open perspective way for effectively electrical writing and reading of the AFM state and its application in energy efficient magnetic memory devices.
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin p
olarized La0.7Sr0.3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in which we can probe the effect of the barrier by comparing junction behavior above and below the Curie temperature of the barrier layer. When the barrier is paramagnetic, the spin polarized transport is dominated by interface scattering and surface spin waves; however, when the barrier is ferrimagnetic, spin flip scattering due to spin waves within the NMO barrier dominates the transport.
We study the magnetic and transport properties of all-manganite heterostructures consisting of ferromagnetic metallic electrodes separated by an antiferromagnetic barrier. We find that the magnetic ordering in the barrier is influenced by the relativ
e orientation of the electrodes magnetization producing a large difference in resistance between the parallel and antiparallel orientations of the ferromagnetic layers. The external application of a magnetic field in a parallel configuration also leads to large magnetoresistance.
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets
. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the s
trontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched STiO$_3$ barrier, reaching values of up to 350% at T=5 K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T>200 K. Our results suggest that by employing a better lattice matched ferromagnetic electrode and thus reducing the structural defects in the strontium stannate barrier even larger TMR ratios might be possible in the future.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
