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Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin polarized La0.7Sr0.3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in which we can probe the effect of the barrier by comparing junction behavior above and below the Curie temperature of the barrier layer. When the barrier is paramagnetic, the spin polarized transport is dominated by interface scattering and surface spin waves; however, when the barrier is ferrimagnetic, spin flip scattering due to spin waves within the NMO barrier dominates the transport.
We investigate the effects of electronic correlations in the full-Heusler Co$_2$MnSi, by combining a theoretical analysis of the spin-resolved density of states with tunneling-conductance spectroscopy measurements using Co$_2$MnSi as electrode. Both
We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two complimentary proces
A spin-tunnel-junction based on manganites, with La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO$_3$ (LMO) as insulating barrier, is here theoretically discussed using double exchange model Ha
We present the electron tunneling transport and its magnetic field modulation of a superconducting (SC) Josephson junction with a barrier of single ferromagnetic (FM) Kitaev layer. We find that at H = 0, the Josephson current IS displays two peaks at
We used Raman scattering to study the lattice and magnetic excitations in the hexagonal HoMnO3 single crystals. The E2 phonon mode at 237 cm-1 is affected by the magnetic order. This mode is related to the displacement of Mn and O ions in a-b plane a