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A spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump in the electron g factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors.
The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero ap
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the di
We predict the existence of a torque acting on an isotropic neutral nanosphere activated by a static magnetic field when the particle temperature differs from the surrounding vacuum. This phenomenon originates in time-reversal symmetry breaking of th
We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope with approx
The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are comp