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تسجيل مستخدم جديدColossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor
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We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or Kondo semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.
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