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تسجيل مستخدم جديدSymmetry and spin dephasing in (110)-grown quantum wells
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Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer position.
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We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques compris
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