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The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results and a theoretical model we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics experiments.
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly
We report on the experimental observation of a hitherto ignored long-range electromagnetic coupling between self-assembled quantum dots. A 12 times enhancement of the quantum dot exciton lifetime is observed by means of time-resolved differential ref
We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their
We demonstrate that resonant excitation of CdMnTe self-assembled quantum dots creates an ensemble of spin-polarized magnetic polarons at B=0 T. The strong spatial confinement characteristic of quantum dots significantly increases the stability of mag
Epitaxial self-assembled quantum dots (SAQDs) are of interest for nanostructured optoelectronic and electronic devices such as lasers, photodetectors and nanoscale logic. Spatial order and size order of SAQDs are important to the development of usabl