ﻻ يوجد ملخص باللغة العربية
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using separate contacts for injection and detection, we isolate the effect of spin absorption from any change in the spin injection and detection mechanisms. As inferred from the thickness dependence, the effective spin current $j_e = frac{2e}{hbar} j_s$ absorbed by Fe is as large as $10^8$ A/m$^2$. The maximum value of $j_e$ is limited by the resistance-area product of the graphene/Fe interface, which is as small as 3 $Omegamu$m$^2$. The spin current absorbed by the same thickness of Cu is smaller than for Fe, as expected given the longer spin diffusion length and larger spin resistance of Cu compared to Fe. These results allow for a quantitative assessment of the prospects for achieving spin transfer torque switching of a nanomagnet using a graphene-based nonlocal spin valve.
We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxatio
We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed,
We perform 3D micromagnetic simulations of current-driven magnetization dynamics in nanoscale exchange biased spin-valves that take account of (i) back action of spin-transfer torque on the pinned layer, (ii) non-linear damping and (iii) random therm
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in suc
Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent mate