Numerical simulations of hysteretic ac losses in a tubular superconductor/paramagnet heterostructure subject to an oscillating transverse magnetic field are performed within the quasistatic approach, calling upon the COMSOL finite-element software pa
ckage and exploiting magnetostatic-electrostatic analogues. It is shown that one-sided magnetic shielding of a thin, type-II superconducting tube by a coaxial paramagnetic support results in a slight increase of hysteretic ac losses as compared to those for a vacuum environment, when the support is placed inside; a spectacular shielding effect with a possible reduction of hysteretic ac losses by orders of magnitude, however, ensues, depending on the magnetic permeability and the amplitude of the applied magnetic field, when the support is placed outside.
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T=20-300 C) and a
mbient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3x10^(-13) cm^2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.
Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of
local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V.
Hysteretic ac losses in a thin, current-carrying superconductor strip located between two flat magnetic shields of infinite permeability are calculated using Beans model of the critical state. For the shields oriented parallel to the plane of the str
ip, penetration of the self-induced magnetic field is enhanced, and the current dependence of the ac loss resembles that in an isolated superconductor slab, whereas for the shields oriented perpendicular to the plane of the strip, penetration of the self-induced magnetic field is impaired, and the current dependence of the ac loss is similar to that in a superconductor strip flanked by two parallel superconducting shields. Thus, hysteretic ac losses can strongly augment or, respectively, wane when the shields approach the strip.
Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias f
ield. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grains. The kinetics of charge migration assumes presence of mobile oxygen vacancies in the material due to the intentional or unintentional acceptor doping. Satisfactory agreement of the theory with experiment on the Fe-doped lead zirconate titanate is demonstrated.
A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electro
static field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.
A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density of states d
istributions. This approach leads to differential equations for the electric field which have to be solved in a self consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal/insulator/metal system in forward and reverse bias for arbitrary values of the metal/ insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplary using a simplified model of an organic semiconductor.
An exact analytic representation of the critical state of a current-carrying type-II superconductor strip located inside a cylindrical magnetic cavity of high permeability is derived. The obtained results show that, when the cavity radius is small, p
enetration of magnetic flux fronts is strongly reduced as compared to the situation in an isolated strip. From our generic representation it is possible to establish current profiles in closed cavities of various other geometries too by means of conformal mapping of the basic configuration addressed.
