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A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.
Hybrid evolution protocols, composed of unitary dynamics and repeated, continuous or projective measurements, give rise to new, intriguing quantum phenomena, including entanglement phase transitions and unconventional conformal invariance. We introdu
In an attempt to regularize a previously known exactly solvable model [Yang and Zhang, Eur. J. Phys. textbf{40}, 035401 (2019)], we find yet another exactly solvable toy model. The interesting point is that while the Hamiltonian of the model is param
We have proposed an exactly solvable quantum spin-3/2 model on a square lattice. Its ground state is a quantum spin liquid with a half integer spin per unit cell. The fermionic excitations are gapless with a linear dispersion, while the topological v
Within the formalism of matrix product ansatz, we study a two-species asymmetric exclusion process with backward and forward site-ordered sequential update. This model, which was originally introduced with the random sequential update, describes a tw
The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density)