High temperature superconductivity in iron pnictides and chalcogenides emerges when a magnetic phase is suppressed. The multi-orbital character and the strength of correlations underlie this complex phenomenology, involving magnetic softness and anis
otropies, with Hunds coupling playing an important role. We review here the different theoretical approaches used to describe the magnetic interactions in these systems. We show that taking into account the orbital degree of freedom allows us to unify in a single phase diagram the main mechanisms proposed to explain the (pi,0) order in iron pnictides: the nesting-driven, the exchange between localized spins, and the Hund induced magnetic state with orbital differentiation. Comparison of theoretical estimates and experimental results helps locate the Fe superconductors in the phase diagram. In addition, orbital physics is crucial to address the magnetic softness, the doping dependent properties, and the anisotropies.
We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discuss
ed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell correction and a configuration interaction account of the electron-electron correlations. We also derive insightful, yet less accurate, analytical approximations and discuss their validity and limitations -- in particular, for a donor pair, we discuss the single orbital LCAO method, the Huckel approximation and the Hubbard model. Finally we discuss the connection between these results and recent experiments on few dopant devices.
Electronic interactions in multiorbital systems lead to non-trivial features in the optical spectrum. In iron superconductors the Drude weight is strongly suppressed with hole-doping. We discuss why the common association of the renormalization of th
e Drude weight with that of the kinetic energy, used in single band systems, does not hold in multi-orbital systems. This applies even in a Fermi liquid description when each orbital is renormalized differently, as it happens in iron superconductors. We estimate the contribution of interband transitions at low energies. We show that this contribution is strongly enhanced by interactions and dominates the coherent part of the spectral weight in hole-doped samples at frequencies currently used to determine the Drude weight.
Charge, spin and lattice degrees of freedom are strongly entangled in iron superconductors. A neat consequence of this entanglement is the behavior of the A_{1g} As-phonon resonance in the different polarization symmetries of Raman spectroscopy when
undergoing the magneto-structural transition. In this work we show that the observed behavior could be a direct consequence of the coupling of the phonons with the electronic excitations in the anisotropic magnetic state. We discuss this scenario within a five orbital tight-binding model coupled to phonons via the dependence of the Slater-Koster parameters on the As position. We identify two qualitatively different channels of the electron-phonon interaction: a geometrical one related to the Fe-As-Fe angle and another one associated with the modification upon As displacement of the Fe-As energy integrals pdsigma and pdpi. While both mechanisms result in a finite B_{1g} response, the behavior of the phonon intensity in the A_{1g} and B_{1g} Raman polarization geometries is qualitatively different when the coupling is driven by the angle or by the energy integral dependence. We discuss our results in view of the experimental reports.
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground
state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures.
Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ulti
mately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.
We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3, a strong correlated insulator, and CaMnO3, a band-insulator. We find that a ferromagnetic and metall
ic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron gas density by selective doping is also discussed.
We study the magnetic and transport properties of all-manganite heterostructures consisting of ferromagnetic metallic electrodes separated by an antiferromagnetic barrier. We find that the magnetic ordering in the barrier is influenced by the relativ
e orientation of the electrodes magnetization producing a large difference in resistance between the parallel and antiparallel orientations of the ferromagnetic layers. The external application of a magnetic field in a parallel configuration also leads to large magnetoresistance.
