This paper investigates power splitting for full-duplex relay networks with wireless information and energy transfer. By applying power splitting as a relay transceiver architecture, the full duplex information relaying can be powered by energy harve
sted from the source-emitted radio frequency signal. In order to minimize outage probability, power splitting ratios have been dynamically optimized according to full channel state information (CSI) and partial CSI, respectively. Under strong loop interference, the proposed full CSI-based and partial CSI-based power splitting schemes achieve the better outage performance than the fixed power splitting scheme, whereas the partial CSI-based power splitting scheme can ensure competitive outage performance without requiring CSI of the second-hop link. It is also observed that the worst outage performance is achieved when the relay is located midway between the source and destination, whereas the outage performance of partial CSI-based power splitting scheme approaches that of full CSI-based scheme when the relay is placed close to the destination.
This study investigates wireless information and energy transfer for dual-hop amplify-and-forward full-duplex relaying systems. By forming energy efficiency (EE) maximization problem into a concave fractional program of transmission power, three rela
y control schemes are separately designed to enable energy harvesting and full-duplex information relaying. With Rician fading modeled residual self-interference channel, analytical expressions of outage probability and ergodic capacity are presented for the maximum relay, signal-to-interference-plus-noise-ratio (SINR) relay, and target relay. It has shown that EE maximization problem of the maximum relay is concave for time switching factor, so that bisection method has been applied to obtain the optimized value. By incorporating instantaneous channel information, the SINR relay with collateral time switching factor achieves an improved EE over the maximum relay in delay-limited and delay-tolerant transmissions. Without requiring channel information for the second-hop, the target relay ensures a competitive performance for outage probability, ergodic capacity, and EE. Comparing to the direct source-destination transmission, numerical results show that the proposed relaying scheme is beneficial in achieving a comparable EE for low-rate delay-limited transmission.
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb com
pared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero g
ate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model.
We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115In in the simplest pseudospin quantum Hall f
erromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T1 at the peak and the dip is different but almost temperature independent. The large Zeeman, cyclotron, and exchange energy scales of the InSb 2DEG contribute to the persistence of the RDNMR signal at high temperatures.
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly
coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-po
tential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.
