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A gate-defined silicon quantum dot molecule

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 نشر من قبل Hongwu Liu
 تاريخ النشر 2008
  مجال البحث فيزياء
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We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.



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