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The concept of mass-generation via the Higgs mechanism was strongly inspired by earlier works on the Meissner-Ochsenfeld effect in superconductors. In quantum field theory, the excitations of longitudinal components of the Higgs field manifest as mas sive Higgs bosons. The analogous Higgs mode in superconductors has not yet been observed due to its rapid decay into particle-hole pairs. Following recent theories, however, the Higgs mode should decrease below the pairing gap $2Delta$ and become visible in two-dimensional systems close to the superconductor-insulator transition (SIT). For experimental verification, we measured the complex terahertz transmission and tunneling density of states (DOS) of various thin films of superconducting NbN and InO close to criticality. Comparing both techniques reveals a growing discrepancy between the finite $2Delta$ and the threshold energy for electromagnetic absorption which vanishes critically towards the SIT. We identify the excess absorption below $2Delta$ as a strong evidence of the Higgs mode in two dimensional quantum critical superconductors.
The interplay between disorder and superconductivity has intrigued physicists for decades. Of particular interest is the influence of disorder on the superconducting energy gap $Delta$. In the absence of Coulomb interactions between electrons, disord er leads to emergent granularity of the local order parameter resulting in a pseudogap at temperatures above the critical temperature $T_c$, as well as a finite gap $Delta$ on the insulating side of the disorder-driven superconductor-insulator transition (SIT). At the same time, disorder also enhances the Coulomb interactions, which subsequently may influence $Delta$ in a manner that is still not fully understood. Here we investigate the evolution of the energy gap through the SIT by two different experimental methods: tunneling spectroscopy, in which a metallic electrode is placed close to the studied sample thus screening the Coulomb interactions, and terahertz (THz) spectroscopy, which probes the unscreened sample. The comparison between the two methods illustrates the role played by electronic interactions in determining the nature of the phases across the SIT and sheds light on the mechanisms involved in the destruction of superconductivity.
We present field effect measurements on discontinuous 2D thin films which are composed of a sub monolayer of nano-grains of Au, Ni, Ag or Al. Like other electron glasses these systems exhibit slow conductance relaxation and memory effects. However, u nlike other systems, the discontinuous films exhibit a dramatic slowing down of the dynamics below a characteristic temperature $T^*$. $T^*$ is typically between 10-50K and is sample dependent. For $T<T^*$ the sample exhibits a few other peculiar features such as repeatable conductance fluctuations in millimeter size samples. We suggest that the enhanced system sluggishness is related to the current carrying network becoming very dilute in discontinuous films so that the system contains many parts which are electrically very weakly connected and the transport is dominated by very few weak links. This enables studying the glassy properties of the sample as it transitions from a macroscopic sample to a mesocopic sample, hence, the results provide new insight on the underlying physics of electron glasses.
We compare tunneling density of states (TDOS) into two ultrathin Ag films, one uniform and one granular, for different degrees of disorder. The uniform film shows a crossover from Altshuler-Aronov (AA) zero bias anomaly to Efros Shklovskii (ES) like Coulomb gap as the disorder is increased. The granular film, on the other hand, exhibits AA behavior even deeply in the insulating regime. We analyze the data and find that granularity introduces a new regime for the TDOS. While the conductivity is dominated by hopping between clusters of grains and is thus insulating, the TDOS probes the properties of an individual cluster which is metallic.
We present tunneling spectroscopy and transport measurements on disordered indium oxide films that reveal the existence of a superconducting gap in an insulating state. Two films on both sides of the disorder induced superconductor to insulator trans ition (SIT) show the same energy gap scale at low temperatures. This energy gap persists up to relatively high magnetic fields and is observed across the magnetoresistance peak typical of disordered superconductors. The results provide useful information for understanding the nature of the insulating state in the disorder induced SIT.
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