ترغب بنشر مسار تعليمي؟ اضغط هنا

Zero bias anomaly in a two dimensional granular insulator

107   0   0.0 ( 0 )
 نشر من قبل Aviad Frydman
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We compare tunneling density of states (TDOS) into two ultrathin Ag films, one uniform and one granular, for different degrees of disorder. The uniform film shows a crossover from Altshuler-Aronov (AA) zero bias anomaly to Efros Shklovskii (ES) like Coulomb gap as the disorder is increased. The granular film, on the other hand, exhibits AA behavior even deeply in the insulating regime. We analyze the data and find that granularity introduces a new regime for the TDOS. While the conductivity is dominated by hopping between clusters of grains and is thus insulating, the TDOS probes the properties of an individual cluster which is metallic.



قيم البحث

اقرأ أيضاً

We report on an anomalous behavior of the spin-splitting zeros in the de Haas-van Alphen (dHvA) signal of a quasi-two-dimensional organic superconductor. The zeros as well as the angular dependence of the amplitude of the second harmonic deviate rema rkably from the standard Lifshitz-Kosevich (LK) prediction. In contrast, the angular dependence of the fundamental dHvA amplitude as well as the spin-splitting zeros of the Shubnikov-de Haas signal follow the LK theory. We can explain this behavior by small chemical-potential oscillations and find a very good agreement between theory and experiment. A detailed wave-shape analysis of the dHvA signal corroborates the existence of an oscillating chemical potential.
We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface ch aracteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state.
Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polariza tion models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly dependent on strain. It is suggested that careful control of the strain is essential when studying the electronic and magnetic properties of layered van der Waals solids.
308 - Yun Song , S. Bulut , R. Wortis 2008
We study the effect of strong correlations on the zero bias anomaly (ZBA) in disordered interacting systems. We focus on the two-dimensional extended Anderson-Hubbard model, which has both on-site and nearest-neighbor interactions on a square lattice . We use a variation of dynamical mean field theory in which the diagonal self-energy is solved self-consistently at each site on the lattice for each realization of the randomly-distributed disorder potential. Since the ZBA occurs in systems with both strong disorder and strong interactions, we use a simplified atomic-limit approximation for the diagonal inelastic self-energy that becomes exact in the large-disorder limit. The off-diagonal self-energy is treated within the Hartree-Fock approximation. The validity of these approximations is discussed in detail. We find that strong correlations have a significant effect on the ZBA at half filling, and enhance the Coulomb gap when the interaction is finite-ranged.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا