We study the unitary propagation of a two-particle one-dimensional Schrodinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coul
omb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolution during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.
We compute the exact single-particle time-resolved dynamics of electronic Mach-Zehnder interferometers based on Landau edge-states transport, and assess the effect of the spatial localization of carriers on the interference pattern. The exact carrier
dynamics is obtained by solving numerically the time-dependent Schroedinger equation with a suitable 2D potential profile reproducing the interferometer design. An external magnetic field, driving the system to the quantum Hall regime with filling factor one, is included. The injected carriers are represented by a superposition of edge states and their interference pattern reproduces the results of Y.Ji et al.[Nature 422, 415 (2003)]. By tuning the system towards different regimes, we find two additional features in the transmission spectra, both related to carrier localization, namely a damping of the Aharonov-Bohm oscillations with increasing difference in the arms length, and an increased mean transmission that we trace to the energy-dependent transmittance of quantum point contacts. Finally, we present an analytical model, also accounting for the finite spatial dispersion of the carriers, able to reproduce the above effects.
We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the inter-electro
n repulsion, and Rashba and Dresselhaus spin-orbit couplings are exactly diagonalized. We show that electron-electron interaction strongly affects spin-orbit admixture in the sample. Consequently, relaxation rates strongly depend on the number of carriers confined in the dot. We identify the mechanisms which may lead to improved spin stability in few electron (>2) quantum dots as compared to the usual one and two electron devices. Finally, we discuss recent experiments on triplet-singlet transitions in GaAs dots subject to external magnetic fields. Our simulations are in good agreement with the experimental findings, and support the interpretation of the observed spin relaxation as being due to spin-orbit coupling assisted by acoustic phonon emission.
