We report the observation of longitudinal spin Seebeck effects (LSSE) in an all-oxide bilayer system comprising an IrO$_2$ film and an Y$_3$Fe$_5$O$_{12}$ film. Spin currents generated by a temperature gradient across the IrO$_2$/Y$_3$Fe$_5$O$_{12}$
interface were detected as electric voltage via the inverse spin Hall effect in the conductive IrO$_2$ layer. This electric voltage is proportional to the magnitude of the temperature gradient and its magnetic field dependence is well consistent with the characteristic of the LSSE. This demonstration may lead to the realization of low-cost, stable, and transparent spin-current-driven thermoelectric devices.
Hall effects have been employed as sensitive detectors of magnetic fields and magnetizations. In spintronics, exotic phenomena often emerge from a non-equilibrium spin polarization or magnetization, that is very difficult to measure directly. The cha
llenge is due to the tiny total moment, which is out of reach of superconducting quantum interference devices and vibrating sample magnetometers or spectroscopic methods such as X-ray magnetic circular dichroism. The Kerr effect is sufficiently sensitive only in direct gap semiconductors, in which the Kerr angle can be resonantly enhanced. Here we demonstrate that even one excess spin in a million can be detected by a Hall effect at room temperature. The novel Hall effect is not governed by the spin Hall conductivity but by its energy derivative thereby related to the spin Nernst effect.
Spin-current injection into an organic semiconductor $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or
spin-wave resonance, a voltage signal was found to appear in the $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$. We found that the voltage signal in the $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.
Spin current injection from sputtered yttrium iron garnet (YIG) films into an adjacent platinum layer has been investigated by means of the spin pumping and the spin Seebeck effects. Films with a thickness of 83 and 96 nanometers were fabricated by o
n-axis magnetron rf sputtering at room temperature and subsequent post-annealing. From the frequency dependence of the ferromagnetic resonance linewidth, the damping constant has been estimated to be $(7.0pm1.0)times 10^{-4}$. Magnitudes of the spin current generated by the spin pumping and the spin Seebeck effect are of the same order as values for YIG films prepared by liquid phase epitaxy. The efficient spin current injection can be ascribed to a good YIG|Pt interface, which is confirmed by the large spin-mixing conductance $(2.0pm0.2)times 10^{18}$ m$^{-2}$.
The longitudinal spin-Seebeck effect (LSSE) has been investigated for Pt/yttrium iron garnet (YIG) bilayer systems. The magnitude of the voltage induced by the LSSE is found to be sensitive to the Pt/YIG interface condition. We observed large LSSE vo
ltage in a Pt/YIG system with a better crystalline interface, while the voltage decays steeply when an amorphous layer is introduced at the interface artificially.
A platinum (Pt)/yttrium iron garnet (YIG) bilayer system with a well-controlled interface has been developed; spin mixing conductance at the Pt/YIG interface has been studied. Crystal perfection at the interface is experimentally demonstrated to cont
ribute to large spin mixing conductance. The spin mixing conductance is obtained to be $1.3times10^{18} rm{m^{-2}}$ at the well-controlled Pt/YIG interface, which is close to a theoretical prediction.
Model quantum Hall states including Laughlin, Moore-Read and Read-Rezayi states are generalized into appropriate anisotropic form. The generalized states are exact zero-energy eigenstates of corresponding anisotropic two- or multi-body Hamiltonians,
and explicitly illustrate the existence of geometric degrees of in the fractional quantum Hall effect. These generalized model quantum Hall states can provide a good description of the quantum Hall system with anisotropic interactions. Some numeric results of these anisotropic quantum Hall states are also presented.
