Nonsymmoprhic symmetries, such as screw rotations or glide reflections, can enforce band crossings within high-symmetry lines or planes of the Brillouin zone. When these band degeneracies are close to the Fermi energy, they can give rise to a number
of unusual phenomena: e.g., anomalous magnetoelectric responses, transverse Hall currents, and exotic surface states. In this paper, we present a comprehensive classification of such nonsymmorphic band crossings in trigonal materials with strong spin-orbit coupling. We find that in trigonal systems there are two different types of nonsymmorphic band degeneracies: (i) Weyl points protected by screw rotations with an accordion-like dispersion, and (ii) Weyl nodal lines protected by glide reflections. We report a number of existing materials, where these band crossings are realized near the Fermi energy. This includes Cu2SrSnS4 and elemental tellurium (Te), which exhibit accordion Weyl points; and the tellurium-silicon clathrate Te16Si38, which shows Weyl nodal lines. The ab-initio band structures and surface states of these materials are studied in detail, and implications for experiments are briefly discussed.
Shift current is a DC current generated from nonlinear light-matter interaction in a non-centrosymmetric crystal and is considered a promising candidate for next generation photovoltaic devices. The mechanism for shift currents in real materials is,
however, still not well understood, especially if electron-hole interactions are taken into account. Here, we employ a first-principles interacting Greens-function approach on the Keldysh contour to study photocurrents generated by nonlinear optical processes in real materials and discover a strong DC shift current at subbandgap excitation frequencies in monolayer GeS due to strongly bound excitons, as well as giant enhancement in the shift current coefficients at above bandgap photon frequencies. Our results suggest that atomically thin two-dimensional materials may be promising building blocks for next generation shift current devices with efficiencies beyond the Shockley-Queisser limit.
Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in th
ese single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different CDW symmetry is unexpected. We report herein the successful creation of pristine single-layer VSe$_2$, which shows a ($sqrt7 times sqrt3$) CDW in contrast to the (4 $times$ 4) CDW for the layers in bulk VSe$_2$. Angle-resolved photoemission spectroscopy (ARPES) from the single layer shows a sizable ($sqrt7 times sqrt3$) CDW gap of $sim$100 meV at the zone boundary, a 220 K CDW transition temperature twice the bulk value, and no ferromagnetic exchange splitting as predicted by theory. This robust CDW with an exotic broken symmetry as the ground state is explained via a first-principles analysis. The results illustrate a unique CDW phenomenon in the two-dimensional limit.
As reflection symmetry or space-time inversion symmetry is preserved, with a non-contractible integral loop respecting the symmetry in the Brilliouin zone, Berry phase is quantized in proper basis. Topological nodal lines can be enclosed in the integ
ral loop and $pi$-Berry phase topologically protects the nodal lines. In this work, we show that to have quantized Berry phase restricted by the symmetry in any crystal structure, we choose to use the cell-periodic convention and define the origin point in the real space at one of the reflection (inversion) centers. In addition, $pi$-Berry phase is not the sufficient condition leading to the presence of the stable surface states. Their presence crucially depends on the location of the termination and the crystal structure in the unit cell. By using these new conditions we further reexamine if stable surface states exist in the known topological nodal line materials stemming from reflection symmetry or space-time inversion symmetry.
Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-tempera
ture applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with the 1T structure that does not exist in the bulk form of WSe$_2$. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observed a gap of 129 meV in the 1T layer and an in-gap edge state located near the layer boundary. The systems 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.
Two-dimensional materials constitute a promising platform for developing nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement
and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 x 2) charge density wave order in single-layer TiTe$_2$ with a transition temperature of 92 $pm$ 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in 2- and multi-layer TiTe$_2$, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.
Topological semimetals exhibit band crossings near the Fermi energy, which are protected by the nontrivial topological character of the wave functions. In many cases, these topological band degeneracies give rise to exotic surface states and unusual
magneto-transport properties. In this paper, we present a complete classification of all possible nonsymmorphic band degeneracies in hexagonal materials with strong spin-orbit coupling. This includes (i) band crossings protected by conventional nonsymmorphic symmetries, whose partial translation is within the invariant space of the mirror/rotation symmetry; and (ii) band crossings protected by off-centered mirror/rotation symmetries, whose partial translation is orthogonal to the invariant space. Our analysis is based on (i) the algebraic relations obeyed by the symmetry operators and (ii) the compatibility relations between irreducible representations at different high-symmetry points of the Brillouin zone. We identify a number of existing materials where these nonsymmorphic nodal lines are realized. Based on these example materials, we examine the surface states that are associated with the topological band crossings. Implications for experiments and device applications are briefly discussed.
We study the properties of a family of anti-pervoskite materials, which are topological crystalline insulators with an insulating bulk but a conducting surface. Using ab-initio DFT calculations, we investigate the bulk and surface topology and show t
hat these materials exhibit type-I as well as type-II Dirac surface states protected by reflection symmetry. While type-I Dirac states give rise to closed circular Fermi surfaces, type-II Dirac surface states are characterized by open electron and hole pockets that touch each other. We find that the type-II Dirac states exhibit characteristic van-Hove singularities in their dispersion, which can serve as an experimental fingerprint. In addition, we study the response of the surface states to magnetic fields.
In an ordinary three-dimensional metal the Fermi surface forms a two-dimensional closed sheet separating the filled from the empty states. Topological semimetals, on the other hand, can exhibit protected one-dimensional Fermi lines or zero-dimensiona
l Fermi points, which arise due to an intricate interplay between symmetry and topology of the electronic wavefunctions. Here, we study how reflection symmetry, time-reversal symmetry, SU(2) spin-rotation symmetry, and inversion symmetry lead to the topological protection of line nodes in three-dimensional semi-metals. We obtain the crystalline invariants that guarantee the stability of the line nodes in the bulk and show that a quantized Berry phase leads to the appearance of protected surfaces states with a nearly flat dispersion. By deriving a relation between the crystalline invariants and the Berry phase, we establish a direct connection between the stability of the line nodes and the topological surface states. As a representative example of a topological semimetal with line nodes, we consider Ca$_3$P$_2$ and discuss the topological properties of its Fermi line in terms of a low-energy effective theory and a tight-binding model, derived from ab initio DFT calculations. Due to the bulk-boundary correspondence, Ca$_3$P$_2$ displays nearly dispersionless surface states, which take the shape of a drumhead. These surface states could potentially give rise to novel topological response phenomena and provide an avenue for exotic correlation physics at the surface.
