We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi
energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modulation of the energy barrier between graphene and pentacene as large as 300meV.
The flat bands in bilayer graphene(BLG) are sensitive to electric fields Ebot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5
]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, when the electron-density is at the carrier neutrality point (CNP). The theoretically proposed gaps[6,7,10] in bilayer graphene are analogous[17,18] to the masses generated by broken symmetries in particle physics and give rise to large momentum-space Berry curvatures[8,19] accompanied by spontaneous quantum Hall effects[7-9]. Though recent experiments[20-23] have provided convincing evidence of strong electronic correlations near the CNP in BLG, the presence of gaps is difficult to establish because of the lack of direct spectroscopic measurements. Here we present transport measurements in ultra-clean double-gated BLG, using source-drain bias as a spectroscopic tool to resolve a gap of ~2 meV at the CNP. The gap can be closed by an electric field Ebot sim13 mV/nm but increases monotonically with a magnetic field B, with an apparent particle-hole asymmetry above the gap, thus providing the first mapping of the ground states in BLG.
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacki
ng orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor { u}=0, ABC TLG exhibits quantum Hall plateaus at { u}=-30, pm 18, pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.
We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron
and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy, we observe short range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects and the underlying SiO$_2$ substrate.
We study the interaction-induced localization -- the so-called self-trapping -- of a neutral impurity atom immersed in a homogeneous Bose-Einstein condensate (BEC). Based on a Hartree description of the BEC we show that -- unlike repulsive impurities
-- attractive impurities have a singular ground state in 3d and shrink to a point-like state in 2d as the coupling approaches a critical value. Moreover, we find that the density of the BEC increases markedly in the vicinity of attractive impurities in 1d and 2d, which strongly enhances inelastic collisions between atoms in the BEC. These collisions result in a loss of BEC atoms and possibly of the localized impurity itself.
We report on the first measurement of the thermal conductivity of a suspended single layer graphene. The measurements were performed using a non-contact optical technique. The near room-temperature values of the thermal conductivity in the range ~ 48
40 to 5300 W/mK were extracted for a single-layer graphene. The extremely high value of the thermal conductivity suggests that graphene can outperform carbon nanotubes in heat conduction.
The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of
graphene on Si/SiO2 and GaAs is positioned at 1580 cm-1 it is down-shifted by ~5 cm-1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm-1. The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.
