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We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modulation of the energy barrier between graphene and pentacene as large as 300meV.
We use time-resolved molecular orbital mapping to explore fundamental processes of excited wave packets and charge transfer dynamics in organic films on femtosecond time scales. We investigate a bilayer pentacene film on Ag(110) by optical laser pump
The relativistic charge carriers in monolayer graphene can be manipulated in manners akin to conventional optics (electron-optics): angle-dependent Klein tunneling collimates an electron beam (analogous to a laser), while a Veselago refraction proces
We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in our appro
We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in the additio
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, tho