By means of the FLAPW-GGA approach, we have systematically studied the structural and electronic properties of tetragonal dichalcogenides KNi2Ch2 (Ch = S, Se, and Te). Our results show that replacements of chalcogens (S -> Se -> Te) lead to anisotrop
ic deformations of the crystals structure, which are related to the strong anisotropic character of the inter-atomic bonds, where inside the [Ni2Ch2] blocks, mixed covalent-ionic-metallic bonds occur, whereas between the adjacent [Ni2Ch2] blocks and K atomic sheets, ionic bonds emerge. We found that in the sequence KNi2S2 -> KNi2Se2 -> KNi2Te2 (i) the overall band structure (where the near-Fermi valence bands are due mainly to the Ni states) is preserved, but the width of the common valence band and the widths of the separate subbands and the gaps decrease; (ii) the total DOSs at the Fermi level also decrease; and (iii) for the Fermi surfaces, the most appreciable changes are demonstrated by the hole-like sheets, when a necklace-like topology is formed for the 2D-like sheets and the volume of the closed pockets decreases. Some trends in structural and electronic parameters for ThCr2Si2-type layered dichalcogenides, KNi2Ch2, KFe2Ch2, KCo2Se2, are discussed.
Very recently, two new hexagonal rhenium sub-nitrides Re3N and Re2N, which belong to a rather rare group of known metal-rich (M/N > 1) nitrides of heavy 4d,5d metals, have been successfully synthesized, and their potential technological applications
as ultra-incompressible materials have been proposed. In this work we present a detailed ab initio study of novel rhenium sub-nitrides in comparison with hcp-Re and wurtzite-like rhenium mono-nitride ReN, with the purpose to evaluate the trends of the elastic, electronic properties and chemical bonding in the series of these hexagonal systems as a function of the Re/N stoichiometry: Re rightarrow Re3N rightarrow Re2N rightarrow ReN.
