We present a direct spectroscopic observation of a shallow hydrogen-like muonium state in SrTiO$_3$ which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state
is temperature dependent and appears below $sim 70$ K. From the temperature dependence we estimate an activation energy of $sim 50$ meV in the bulk and $sim 23$ meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO$_3$. The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO$_{3}$-based oxide interface systems.
The characteristics of shallow hydrogen-like muonium (Mu) states in nominally undoped ZnO and CdS (0001) crystals have been studied close to the surface at depths in the range of 10 nm - 180 nm by using low-energy muons, and in the bulk using convent
ional muSR. The muon implantation depths are adjusted by tuning the energy of the low-energy muons between 2.5 keV and 30 keV. We find that the bulk ionization energy of the shallow donor-like Mu state is lowered by about 10 meV at a depth of 100 nm, and continuously decreasing on approaching the surface. At a depth of about 10 nm the ionization energy is further reduced by 25-30 meV compared to its bulk value. We attribute this change to the presence of electric fields due to band bending close to the surface, and we determine the depth profile of the electric field within a simple one-dimensional model.
We report the results of a search for spontaneous magnetism due to a time reversal symmetry breaking phase in the superconducting state of (110)-oriented YBCO films, expected near the surface in this geometry. Zero field and weak transverse field mea
surements performed using the low-energy muon spin rotation technique with muons implanted few nm inside optimally-doped YBCO-(110) films show no appearance of spontaneous magnetic fields below the superconducting temperature down to 2.9 K. Our results give an upper limit of ~0.02 mT for putative spontaneous internal fields.
We have performed depth dependent muon spin rotation/relaxation studies of the dynamics of single layer films of {it Au}Fe and {it Cu}Mn spin glasses as a function of thickness and of its behavior as a function of distance from the vacuum interface (
5-70 nm). A significant reduction in the muon spin relaxation rate as a function of temperature with respect to the bulk material is observed when the muons are stopped near (5-10 nm) the surface of the sample. A similar reduction is observed for the whole sample if the thickness is reduced to e.g. 20 nm and less. This reflects an increased impurity spin dynamics (incomplete freezing) close to the surface although the freezing temperature is only modestly affected by the dimensional reduction.
The formation of hydrogen-like muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz and sapphire. By varying the initial energy
of positive muons (mu+) between 1 and 30 keV the number of electron-hole pairs generated in the ionization track of the mu+ can be tuned between a few and several thousand. The results show the strong suppression of the formation of those Mu states that depend on the availability of excess electrons. This indicates, that the role of H-impurity states in determining electric properties of semiconductors and insulators depends on the way how atomic H is introduced into the material.
