The discovery of atomically thin two-dimensional (2D) magnetic semiconductors has triggered enormous research interest recently. In this work, we use first-principles many-body perturbation theory to study a prototypical 2D ferromagnetic semiconducto
r, monolayer chromium tribromide (CrBr$_3$). With broken time-reversal symmetry, spin-orbit coupling, and excitonic effects included through the full-spinor $GW$ and $GW$ plus Bethe-Salpeter equation ($GW$-BSE) methods, we compute the frequency-dependent dielectric function tensor that governs the optical and magneto-optical properties. In addition, we provide a detailed theoretical formalism for simulating magnetic circular dichroism, magneto-optical Kerr effect, and Faraday effect, demonstrating the approach with monolayer CrBr$_3$. Due to reduced dielectric screening in 2D and localized nature of the Cr d orbitals, we find strong self-energy effects on the quasiparticle band structure of monolayer CrBr$_3$ that give a 3.8 eV indirect band gap. Also, excitonic effects dominate the low-energy optical and magneto-optical responses in monolayer CrBr$_3$ where a large exciton binding energy of 2.3 eV is found for the lowest bright exciton state with excitation energy at 1.5 eV. We further find that the magneto-optical signals demonstrate strong dependence on the excitation frequency and substrate refractive index. Our theoretical framework for modelling optical and magneto-optical effects could serve as a powerful theoretical tool for future study of optoelectronic and spintronics devices consisting of van der Waals 2D magnets.
It is well known that the ambient environment can dramatically renormalize the quasiparticle gap and exciton binding energies in low-dimensional materials, but the effect of the environment on the energy splitting of the spin-singlet and spin-triplet
exciton states is less understood. A prominent effect is the renormalization of the exciton binding energy and optical strength (and hence the optical spectrum) through additional screening of the direct Coulomb term describing the attractive electron-hole interaction in the kernel of the Bethe-Salpeter equation (BSE). The repulsive exchange interaction responsible for the singlet-triplet slitting, on the other hand, is unscreened within formal many-body perturbation theory. However, Loren Benedict argued that in practical calculations restricted to a subspace of the full Hilbert space, the exchange interaction should be appropriately screened by states outside of the subspace, the so-called $S$ approximation cite{Benedict2002}. Here, we systematically explore the accuracy of the $S$ approximation for different confined systems, including a molecule and heterostructures of semiconducting and metallic layered materials. We show that the $S$ approximation is actually exact in the limit of small exciton binding energies (i.e., small direct term) and can be used to significantly accelerate convergence of the exciton energies with respect to the number of empty states, provided that a particular effective screening consistent with the conventional Tamm-Dancoff approximation is employed. We further find that the singlet-triplet splitting in the energy of the excitons is largely unaffected by the external dielectric environment for most quasi-two-dimensional materials.
Topology concepts have significantly deepened of our understanding in recent years of the electronic properties of one-dimensional (1D) nano structures such as the graphene nanoribbons. Controlling topological electronic properties of GNRs has been d
emonstrated in both theoretical studies and experimental realization. Most previous works rely on classification theory requiring both time reversal and spatial symmetry of a unit cell in the 1D bulk material that is commensurate to its boundary. To access boundary structures that lead to unit cell with no spatial symmetry and to generalize the theory, we propose here another classification scheme, using chiral symmetry, to arrive at a Z classification that is not only applicable to GNRs with arbitrary terminations, but also to any general 1D chiral structures. This theory, combining with Liebs theorem, moreover enables access to the electrons spin degree of freedom, allowing for investigation of spin physics.
It is well known that for ordinary one-dimensional (1D) disordered systems, the Anderson localization length $xi$ diverges as $lambda^m$ in the long wavelength limit ($lambdarightarrow infty$ ) with a universal exponent $m=2$, independent of the type
of disorder. Here, we show rigorously that pseudospin-1 systems exhibit non-universal critical behaviors when they are subjected to 1D random potentials. In such systems, we find that $xipropto lambda^m$ with $m$ depending on the type of disorder. For binary disorder, $m=6$ and the fast divergence is due to a super-Klein-tunneling effect (SKTE). When we add additional potential fluctuations to the binary disorder, the critical exponent $m$ crosses over from 6 to 4 as the wavelength increases. Moreover, for disordered superlattices, in which the random potential layers are separated by layers of background medium, the exponent $m$ is further reduced to 2 due to the multiple reflections inside the background layer. To obtain the above results, we developed a new analytic method based on a stack recursion equation. Our analytical results are in excellent agreements with the numerical results obtained by the transfer-matrix method (TMM). For pseudospin-1/2 systems, we find both numerically and analytically that $xiproptolambda^2$ for all types of disorder, same as ordinary 1D disordered systems. Our new analytical method provides a convenient way to obtain easily the critical exponent $m$ for general 1D Anderson localization problems.
The absorption spectra of single-layer GaSe and GaTe in the hexagonal phase feature exciton peaks with distinct polarization selectivity. We investigate these distinct features from first-principle calculations using the GW-BSE formalisms. We show th
at the brightness of the exciton absorption peaks is tunable with the polarization of the light. Due to the symmetry of the bands under z-axis mirror symmetry, the bound exciton states selectively couple to either in-plane or out-of-plane polarization of the light. In particular, for a p-polarized light absorption experiment, the absorption peaks of the s-like excitons emerge at large angle of incidence, while the overall absorbance reduces over the rest of the spectrum.
The effect of electron-phonon interactions on optical absorption spectra requires a special treatment in materials with strong electron-hole interactions. We conceptualize these effects as exciton-phonon coupling. Through phonon absorption and emissi
on, the optically accessible excitons are scattered into dark finite-momentum exciton states. We derive a practical expression for the exciton-phonon self-energy that relates to the temperature dependence of the optical transitions and their broadening. This expression differs qualitatively from previous approximated expressions found in literature.
Knowledge of the topology of the electronic ground state of materials has led to deep insights to novel phenomena such as the integer quantum Hall effect and fermion-number fractionalization, as well as other properties of matter. Joining two insulat
ors of different topological classes produces fascinating boundary states in the band gap. Another exciting recent development is the bottom-up synthesis (from molecular precursors) of graphene nanoribbons (GNRs) with atomic precision control of their edge and width. Here we connect these two fields, and show for the first time that semiconducting GNRs of different width, edge, and end termination belong to different topological classes. The topology of GNRs is protected by spatial symmetries and dictated by the terminating unit cell. We have derived explicit formula for their topological invariants, and show that localized junction states developed between two GNRs of distinct topology may be tuned by lateral junction geometry. The topology of a GNR can be further modified by dopants, such as a periodic array of boron atoms. In a superlattice consisted of segments of doped and pristine GNRs, the junction states are stable spin centers, forming a Heisenberg antiferromagnetic spin 1/2 chain with tunable exchange interaction. The discoveries here are not only of scientific interest for studies of quasi one-dimensional systems, but also open a new path for design principles of future GNR-based devices through their topological characters.
We determine the topological phase diagram of BiTl(S$_{1-delta}$Se$_{delta}$)$_2$ as a function of doping and temperature from first-principles calculations. Due to electrontextendash phonon interaction, the bands are renormalized at finite temperatu
re, allowing for a transition between the trivial ($Z_2=0$) and non-trivial ($Z_2=1$) topological phase. We find two distinct regions of the phase diagram with non-trivial topology. In BiTlS$_2$, the phonons promote the crystal to the topological phase at high temperature, while in BiTlSe$_2$, the topological phase exists only at low temperature. This behaviour is explained by the symmetry of the phonon coupling potential, whereby the even phonon modes (whose potential is even under inversion) promote the topological phase and the odd phonon modes promote the trivial phase.
Using state-of-the-art many-body Greens function calculations based on the GW plus cumulant approach, we analyze the properties of plasmon satellites in the electron spectral function resulting from electron-plasmon interactions in one-, two- and thr
ee-dimensional systems. Specifically, we show how their dispersion relation, lineshape and linewidth are related to the properties of the constituent electrons and plasmons. To gain insight into the many-body processes giving rise to the formation of plasmon satellites, we connect the GW plus cumulant approach to a many-body wavefunction picture of electron-plasmon interactions and introduce the coupling-strength weighted electron-plasmon joint-density states as a powerful concept for understanding plasmon satellites.
We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0 $mu_{rm{B
}}$/carrier in a range of $3times 10^{13}$/cm$^{2}$-$1times 10^{14}$/cm$^{2}$ with the system in a half-metal state before the moment starts to descend abruptly. The predicted magnetism originates from an exchange splitting of electronic states at the top of the valence band where the density of states exhibits a sharp van Hove singularity in this quasi-two-dimensional system.
