We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a quantitative descript
ion of transport properties studied experimentally by Elzermann et al. [Appl. Phys. Lett. {bf 84}, 4617 (2004)]. The three-dimensional model describes the electrostatics of the entire device with a quantum dot that changes shape and floats inside a gated region when the applied voltages are varied. Our approach accounts for the metal electrodes of arbitrary geometry and configuration, includes magnetic field applied perpendicular to the growth direction, electron-electron correlation in the confined electron system and its interaction with the electron reservoir surrounding the quantum dot. We calculate the electric field, the space charge distribution as well as energies and wave functions of confined electrons to describe opening of two transport channels between the reservoir and the confined charge puddle. We determine the voltages for charging the dot with up to 4 electrons. The results are in a qualitative and quantitative agreement with the experimental data.
We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave packet interac
ting with the charge induced on the metal surface. Induced quantum wires guide the transfer of electrons along metal paths and induced quantum dots store the electrons in specific locations of the nanostructure. Induced dots and wires can be useful for devices operating on the electron spin.
