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We study the effects of the structural corrugation or rippling on the electronic properties of undoped armchair graphene nanoribbons (AGNR). First, reanalyzing the single corrugated graphene layer we find that the two inequivalent Dirac points (DP), move away one from the other. Otherwise, the Fermi velocity decrease by increasing rippling. Regarding the AGNRs, whose metallic behavior depends on their width, we analyze in particular the case of the zero gap band-structure AGNRs. By solving the Dirac equation with the adequate boundary condition we show that due to the shifting of the DP a gap opens in the spectra. This gap scale with the square of the rate between the high and the wavelength of the deformation. We confirm this prediction by exact numerical solution of the finite width rippled AGNR. Moreover, we find that the quantum conductance, calculated by the non equilibrium Greens function technique vanish when the gap open. The main conclusion of our results is that a conductance gap should appear for all undoped corrugated AGNR independent of their width.
114 - S. Costamagna , J. A. Riera 2008
We study the two-impurity Anderson model on finite chains using numerical techniques. We discuss the departure of magnetic correlations as a function of the interimpurity distance from a pure 2k_F oscillation due to open boundary conditions. We obser ve qualitatively different behaviors in the interimpurity spin correlations and in transport properties at different values of the impurity couplings. We relate these different behaviors to a change in the relative dominance between the Kondo effect and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction. We also observe that when RKKY dominates there is a definite relation between interimpurity magnetic correlations and transport properties. In this case, there is a recovery of 2k_F periodicity when the on-site Coulomb repulsion on the chain is increased at quarter-filling. The present results could be relevant for electronic nanodevices implementing a non-local control between two quantum dots that could be located at variable distance along a wire.
A spin-tunnel-junction based on manganites, with La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO$_3$ (LMO) as insulating barrier, is here theoretically discussed using double exchange model Ha miltonians and numerical techniques. For an even number of LMO layers, the ground state is shown to have anti-parallel LSMO magnetic moments. This highly resistive, but fragile, state is easily destabilized by small magnetic fields, which orient the LSMO moments in the direction of the field. The magnetoresistance associated with this transition is very large, according to Monte Carlo and Density Matrix Renormalization Group studies. The influence of temperature, the case of an odd number of LMO layers, and the differences between LMO and SrTiO$_3$ as barriers are also addressed. General trends are discussed.
We have studied the ferromagnetic Kondo lattice model (FKLM) with an Anderson impurity on finite chains with numerical techniques. We are particularly interested in the metallic ferromagnetic phase of the FKLM. This model could describe either a quan tum dot coupled to one-dimensional ferromagnetic leads made with manganites or a substitutional transition metal impurity in a MnO chain. We determined the region in parameter space where the impurity is empty, half-filled or doubly-occupied and hence where it is magnetic or nonmagnetic. The most important result is that we found, for a wide range of impurity parameters and electron densities where the impurity is magnetic, a singlet phase located between two saturated ferromagnetic phases which correspond approximately to the empty and double-occupied impurity states. Transport properties behave in general as expected as a function of the impurity occupancy and they provide a test for a recently developed numerical approach to compute the conductance. The results obtained could be in principle reproduced experimentally in already existent related nanoscopic devices or in impurity doped MnO nanotubes.
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