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We study the effects of the structural corrugation or rippling on the electronic properties of undoped armchair graphene nanoribbons (AGNR). First, reanalyzing the single corrugated graphene layer we find that the two inequivalent Dirac points (DP), move away one from the other. Otherwise, the Fermi velocity decrease by increasing rippling. Regarding the AGNRs, whose metallic behavior depends on their width, we analyze in particular the case of the zero gap band-structure AGNRs. By solving the Dirac equation with the adequate boundary condition we show that due to the shifting of the DP a gap opens in the spectra. This gap scale with the square of the rate between the high and the wavelength of the deformation. We confirm this prediction by exact numerical solution of the finite width rippled AGNR. Moreover, we find that the quantum conductance, calculated by the non equilibrium Greens function technique vanish when the gap open. The main conclusion of our results is that a conductance gap should appear for all undoped corrugated AGNR independent of their width.
Strain fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a new controlling tool for gaps and transport properties. Here, we analyze the electronic properties of folded
Electronic states at the ends of a narrow armchair nanoribbon give rise to a pair of non-locally entangled spins. We propose two experiments to probe these magnetic states, based on magnetometry and tunneling spectroscopy, in which correlation effect
By analytically constructing the matrix elements of an electron-phonon interaction for the $D$ band in the Raman spectra of armchair graphene nanoribbons, we show that pseudospin and momentum conservation result in (i) a $D$ band consisting of two co
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) bas
We study the effect of the edge disorder on the conductance of the graphene nanoribbons (GNRs). We find that only very modest edge disorder is sufficient to induce the conduction energy gap in the otherwise metallic GNRs and to lift any difference in