We determined frictional figures of merit for a pair of layered honeycomb nanostructures, such as graphane, fluorographene, MoS$_2$ and WO$_2$ moving over each other, by carrying out ab-initio calculations of interlayer interaction under constant loa
ding force. Using Prandtl-Tomlinson model we derived critical stiffness required to avoid stick-slip behavior. We showed that these layered structures have low critical stiffness even under high loading forces due to their charged surfaces repelling each other. The intrinsic stiffness of these materials exceed critical stiffness and thereby avoid the stick-slip regime and attain nearly dissipationless continuous sliding. Remarkably, tungsten dioxide displays much better performance relative to others and heralds a potential superlubricant. The absence of mechanical instabilities leading to conservative lateral forces is also confirmed directly by the simulations of sliding layers.
Single layer core/shell structures consisting of graphene as core and hexagonal boron nitride as shell are studied using first-principles plane wave method within density functional theory. Electronic energy level structure is analysed as a function
of the size of both core and shell. It is found that the confinement of electrons in two dimensional graphene quantum dot is reduced by the presence of boron nitride shell. The energy gap is determined by the graphene states. Comparison of round, hexagonal, rectangular and triangular core/shell structures reveals that their electronic and magnetic states are strongly affected by their geometrical shapes. The energy level structure, energy gap and magnetic states can be modified by external charging. The core part acts as a two-dimensional quantum dot for both electrons and holes. The capacity of extra electron intake of these quantum dots is shown to be limited by the Coulomb blockade in two-dimension.
Silica or SiO$_2$, the main constituent of earths rocks has several 3D complex crystalline and amorphous phases, but it does not have a graphite like layered structure in 3D. Our theoretical analysis and numerical calculations from the first-principl
es predict a single-layer honeycomb like allotrope, h$alpha$-silica, which can be viewed to be derived from the oxidation of silicene and it has intriguing atomic structure with re-entrant bond angles in hexagons. It is a wide band gap semiconductor, which attains remarkable electromechanical properties showing geometrical changes under external electric field. In particular, it is an auxetic metamaterial with negative Poissons ratio and has a high piezoelectric coefficient. While it can form stable bilayer and multilayer structures, its nanoribbons can show metallic or semiconducting behavior depending on their chirality. Coverage of dangling Si orbitals by foreign adatoms can attribute new functionalities to h$alpha$-silica. In particular, Si$_2$O$_5$, where Si atoms are saturated by oxygen atoms from top and bottom sides alternatingly can undergo a structural transformation to make silicatene, another stable, single layer structure of silica.
Using a gold (111) surface as a substrate we have grown in situ by molecular beam epitaxy an atom-thin, ordered, two-dimensional multi-phase film. Its growth bears strong similarity with the formation of silicene layers on silver (111) templates. One
of the phases, forming large domains, as observed in Scanning Tunneling Microscopy, shows a clear, nearly flat, honeycomb structure. Thanks to thorough synchrotron radiation core-level spectroscopy measurements and advanced Density Functional Theory calculations we can identify it to a $sqrt{3}$x$sqrt{3}$R(30{deg}) germanene layer in coincidence with a $sqrt{7}$x$sqrt{7}$R(19.1{deg}) Au(111) supercell, thence, presenting the first compelling evidence of the birth of a novel synthetic germanium-based cousin of graphene.
The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principle density functional techniques and linear response for the thermal and electrical transport. We have considered her
e the two-dimensional silicene and germanene, together with nano-ribbons of different widths. For the nano-ribbons, we have also investigated the possibility of nano-structuring these systems by mixing silicon and germanium. We found that the figure of merit at room temperature of these systems is remarkably high, up to 2.5.
A single graphene layer placed between two parallel Ni(111) surfaces screens the strong attractive force and results in a significant reduction of adhesion and sliding friction. When two graphene layers are inserted, each graphene is attached to one
of the metal surfaces with a significant binding and reduces the adhesion further. In the sliding motion of these surfaces the transition from stick-slip to continuous sliding is attained, whereby non-equilibrium phonon generation through sudden processes is suppressed. The adhesion and corrugation strength continues to decrease upon insertion of the third graphene layer and eventually saturates at a constant value with increasing number of graphene layers. In the absence of Ni surfaces, the corrugation strength of multilayered graphene is relatively higher and practically independent of the number of layers. Present first-principles calculations reveal the superlubricant feature of graphene layers placed between pseudomorphic Ni(111) surfaces, which is achieved through the coupling of Ni-3d and graphene-$pi$ orbitals. The effect of graphene layers inserted between a pair of parallel Cu(111) and Al(111) surfaces are also discussed. The treatment of sliding friction under the constant loading force, by taking into account the deformations corresponding to any relative positions of sliding slabs, is the unique feature of our study.
Motivated by recent experimental observations of Tongay et al. [Tongay et al., Nano Letters, 12(11), 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found t
hat with increasing strain: (1) the E and E Raman peaks (E1g and E2g in bulk) exhibit significant red shifts (up to 30 cm-1), (2) the position of the A1 peak remains at 180 cm-1 (A1g in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear and (4) the electronic band structure undergoes a direct to indirect bandgap crossover under 3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational and optical properties of single layer MoSe2 and similar MX2 dichalcogenides.
The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms i
n the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.
