We measure localized and extended mode profiles at the band edge of slow-light photonic-crystal waveguides using phase-sensitive near-field microscopy. High-resolution band structures are obtained and interpreted, allowing the retrieval of the optica
l density of states (DOS). This constitutes a first observation of the DOS of a periodic system with weak disorder. The Van Hove singularity in the DOS expected at the band edge of an ideal 1D periodic structure is removed by the disorder. The Anderson-localized states form a tail in the density of states, as predicted by Lifshitz for solid-state systems.
We perform phase-sensitive near-field scanning optical microscopy on photonic-crystal waveguides. The observed intricate field patterns are analyzed by spatial Fourier transformations, revealing several guided TE- and TM-like modes. Using the reconst
ruction algorithm proposed by Ha, et al. (Opt. Lett. 34 (2009)), we decompose the measured two-dimensional field pattern in a superposition of propagating Bloch modes. This opens new possibilities to study specific modes in near-field measurements. We apply the method to study the transverse behavior of a guided TE-like mode, where the mode extends deeper in the surrounding photonic crystal when the band edge is approached.
Heralded single photons are prepared at a rate of ~100 kHz via conditional measurements on polarization-nondegenerate biphotons produced in a periodically poled KTP crystal. The single-photon Fock state is characterized using high frequency pulsed op
tical homodyne tomography with a fidelity of (57.6 +- 0.1)%. The state preparation and detection rates allowed us to perform on-the-fly alignment of the apparatus based on real-time analysis of the quadrature measurement statistics.
Photoemission data taken with hard X-ray radiation on cleaved single crystals of the barium parent compound of the MFe$_2$As$_2$ pnictide high temperature superconductor family are presented. Making use of the increased bulk-sensitivity upon hard X-r
ay excitation, and comparing the results to data taken at conventional VUV photoemission excitation energies, it is shown that the BaFe$_2$As$_2$ cleavage surface provides an electrostatic environment that is slightly different to the bulk, most likely in the form of a modified Madelung potential. However, as the data argue against a different surface doping level, and the surface-related features in the spectra are by no means as dominating as seen in systems such as YBa$_2$Cu$_3$O$_x$, we can conclude that the itinerant, near-E$_F$ electronic states are almost unaffected by the existence of the cleavage surface. Furthermore, exploiting the strong changes in photoionisation cross section between the Fe and As states across the wide photon energy range employed, it is shown that the degree of energetic overlap between the iron 3d and arsenic 4p valence bands is particularly small at the Fermi level, which can only mean a very low degree of hybridization between the Fe 3d and As 4p states near and at E$_F$. Consequently, the itinerancy of the charge carriers in this group of materials involves mainly the Fe 3d - Fe 3d overlap integrals with at best a minor role for the Fe 3d - As 4p hopping parameters, and that the states which support superconductivity upon doping are essentially of Fe 3d character.
