The discovery of magic angle twisted bilayer graphene (MATBG) has unveiled a rich variety of superconducting, magnetic and topologically nontrivial phases. The existence of all these phases in one material, and their tunability, has opened new pathwa
ys for the creation of unusual gate tunable junctions. However, the required conditions for their creation - gate induced transitions between phases in zero magnetic field - have so far not been achieved. Here, we report on the first experimental demonstration of a device that is both a zero-field Chern insulator and a superconductor. The Chern insulator occurs near moire cell filling factor v = +1 in a hBN non-aligned MATBG device and manifests itself via an anomalous Hall effect. The insulator has Chern number C = +-1 and a relatively high Curie temperature of Tc = 4.5 K. Gate tuning away from this state exposes strong superconducting phases with critical temperatures of up to Tc = 3.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the /C/= +1 Chern insulator from Chern number C = +-1 to C = 3, characterized by a quantized Hall plateau with Ryx = h/3e2. These observations show that interaction-induced symmetry breaking in MATBG leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B-field. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.
We introduce a new method to continuously map inhomogeneities of a moire lattice and apply it to large-area topographic images we measure on open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle of a TBG device, wh
ich is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.08{deg} around the average of 2.02{deg} over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moire materials.
In transition metal dichalcogenides layers of atomic scale thickness, the electron-hole Coulomb interaction potential is strongly influenced by the sharp discontinuity of the dielectric function across the layer plane. This feature results in peculia
r non-hydrogenic excitonic states, in which exciton-mediated optical nonlinearities are predicted to be enhanced as compared to their hydrogenic counterpart. To demonstrate this enhancement, we performed optical transmission spectroscopy of a MoSe$_2$ monolayer placed in the strong coupling regime with the mode of an optical microcavity, and analyzed the results quantitatively with a nonlinear input-output theory. We find an enhancement of both the exciton-exciton interaction and of the excitonic fermionic saturation with respect to realistic values expected in the hydrogenic picture. Such results demonstrate that unconventional excitons in MoSe$_2$ are highly favourable for the implementation of large exciton-mediated optical nonlinearities, potentially working up to room temperature.
The coexistence of superconducting and correlated insulating states in magic-angle twisted bilayer graphene prompts fascinating questions about the relationship of these orders. Independent control of the microscopic mechanisms governing these phases
could help uncover their individual roles and shed light on their intricate interplay. Here we report on direct tuning of electronic interactions in this system by changing its separation from a metallic screening layer. We observe quenching of correlated insula-tors in devices with screening layer separations that are smaller than a typical Wannier orbital size of 15nm, and with the twist angles slightly deviating from the magic value 1.10 plus(minus) 0.05 degrees. Upon extinction of the insulating orders, the vacated phase space is taken over by superconducting domes that feature critical temperatures comparable to those in the devices with strong insulators. In addition, we find that insulators at half-filling can reappear in small out-of-plane magnetic fields of 0.4 T, giving rise to quantized Hall states with a Chern number of 2. Our study suggests reexamination of the often-assumed mother-child relation between the insulating and superconducting phases in moire graphene, and illustrates a new approach to directly probe microscopic mechanisms of superconductivity in strongly-correlated systems.
Superconductivity often occurs close to broken-symmetry parent states and is especially common in doped magnetic insulators. When twisted close to a magic relative orientation angle near 1 degree, bilayer graphene has flat moire superlattice miniband
s that have emerged as a rich and highly tunable source of strong correlation physics, notably the appearance of superconductivity close to interaction-induced insulating states. Here we report on the fabrication of bilayer graphene devices with exceptionally uniform twist angles. We show that the reduction in twist angle disorder reveals insulating states at all integer occupancies of the four-fold spin/valley degenerate flat conduction and valence bands, i.e. at moire band filling factors nu = 0, +(-) 1, +(-) 2, +(-) 3, and superconductivity below critical temperatures as high as 3 K close to - 2 filling. We also observe three new superconducting domes at much lower temperatures close to the nu = 0 and nu = +(-) 1 insulating states. Interestingly, at nu = +(-) 1 we find states with non-zero Chern numbers. For nu = - 1 the insulating state exhibits a sharp hysteretic resistance enhancement when a perpendicular magnetic field above 3.6 tesla is applied, consistent with a field driven phase transition. Our study shows that symmetry-broken states, interaction driven insulators, and superconducting domes are common across the entire moire flat bands, including near charge neutrality.
The celebrated phenomenon of quantum Hall effect has recently been generalized from transport of conserved charges to that of other approximately conserved state variables, including spin and valley, which are characterized by spin- or valley-polariz
ed boundary states with different chiralities. Here, we report a new class of quantum Hall effect in ABA-stacked graphene trilayers (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the systems mirror reflection symmetry. At the charge neutrality point and a small perpendicular magnetic field $B_{perp}$, the longitudinal conductance $sigma_{xx}$ is first quantized to $4e^2/h$, establishing the presence of four edge channels. As $B_{perp}$ increases, $sigma_{xx}$ first decreases to $2e^2/h$, indicating spin-polarized counter-propagating edge states, and then to approximately $0$. These behaviors arise from level crossings between even and odd parity bulk Landau levels, driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong $B_{perp}$ limit, and a spin-polarized state at intermediate fields. The transitions between spin-polarized and unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions.
Exciton-polaritons in semiconductor microcavities constitute the archetypal realization of a quantum fluid of light. Under coherent optical drive, remarkable effects such as superfluidity, dark solitons or the nucleation of hydrodynamic vortices have
been observed. These phenomena can be all understood as a specific manifestation of collective excitations forming on top of the polariton condensate. In this work, we performed a Brillouin scattering experiment to measure their dispersion relation $omega(mathbf{k})$ directly. The result, such as a speed of sound which is apparently twice too low, cannot be explained upon considering the polariton condensate alone. In a combined theoretical and experimental analysis, we demonstrate that the presence of a reservoir of long-lived excitons interacting with polaritons has a dramatic influence on the nature and characteristic of the quantum fluid, and that it explains our measurement quantitatively. This work clarifies the role of such a reservoir in the different polariton hydrodynamics phenomena occurring under resonant optical drive. It also provides an unambiguous tool to determine the condensate-to-reservoir fraction in the quantum fluid, and sets an accurate framework to approach novel ideas for polariton-based quantum-optical applications.
As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challe
nging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradation pathway of CrI3 is the photocatalytic substitution of iodine by water. While simple encapsulation by Al2O3, PMMA and hexagonal BN (hBN) only leads to modest reduction in degradation rate, minimizing exposure of light markedly improves stability, and CrI3 sheets sandwiched between hBN layers are air-stable for >10 days. By monitoring the transfer characteristics of CrI3/graphene heterostructure over the course of degradation, we show that the aquachromium solution hole-dopes graphene.
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (T
LG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K valley in TLGs lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.
Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical mani
pulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust long-distance spin transport through an AFMI, in our case the gate-controlled, canted antiferromagnetic (CAF) state that appears at the charge neutrality point of graphene in the presence of an external magnetic field. Utilizing gate-controlled quantum Hall (QH) edge states as spin-dependent injectors and detectors, we observe large, non-local electrical signals across a 5 micron-long, insulating channel only when it is biased into the nu=0 CAF state. Among possible transport mechanisms, spin superfluidity in an antiferromagnetic state gives the most consistent interpretation of the non-local signals dependence on magnetic field, temperature and filling factors. This work also demonstrates that graphene in the QH regime is a powerful model system for fundamental studies of antiferromagnetic, and in the case of a large in-plane field, ferromagnetic spintronics.
