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تسجيل مستخدم جديدMeasuring local moire lattice heterogeneity of twisted bilayer graphene
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We introduce a new method to continuously map inhomogeneities of a moire lattice and apply it to large-area topographic images we measure on open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle of a TBG device, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.08{deg} around the average of 2.02{deg} over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moire materials.
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Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomic
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Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moire bands with opposite Chern number [Science 367
, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.
Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emerge
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