We apply $^{125}$Te nuclear magnetic resonance (NMR) spectroscopy to investigate the Dirac semimetal ZrTe$_5$. With the NMR magnetic field parallel to the $b$-axis, we observe significant quantum magnetic effects. These include an abrupt drop at 150
K in spin-lattice relaxation rate. This corresponds to a gap-opening transition in the Dirac carriers, likely indicating the onset of excitonic pairing. Below 50 K, we see a more negative shift for the Te$_z$ bridging site indicating the repopulation of Dirac levels with spin polarized carriers at these temperatures. This is the previously reported 3D quantum Hall regime; however, we see no sign of a charge density wave as has been proposed.
In this work, we report nuclear magnetic resonance (NMR) combined with density functional theory (DFT) studies of the transition metal dichalcogenide ZrTe$_2$. The measured NMR shift anisotropy reveals a quasi-2D behavior connected to a topological n
odal line close to the Fermi level. With the magnetic field perpendicular to the ZrTe$_2$ layers, the measured shift can be well-fitted by a combination of enhanced diamagnetism and spin shift due to high mobility Dirac electrons. The spin-lattice relaxation rates with external field both parallel and perpendicular to the layers at low temperatures match the expected behavior associated with extended orbital hyperfine interaction due to quasi-2D Dirac carriers. In addition, calculated band structures also show clear evidence for the existence of nodal line in ZrTe$_2$ between $Gamma$ and A. For intermediate temperatures, there is a sharp reduction in spin-lattice relaxation rate which can be explained as due to a reduced lifetime for these carriers, which matches the reported large change in mobility in the same temperature range. Above 200 K, the local orbital contribution starts to dominate in an orbital relaxation mechanism revealing the mixture of atomic functions.
We report $^{59}$Co, $^{93}$Nb, and $^{121}$Sb nuclear magnetic resonance (NMR) measurements combined with density functional theory (DFT) calculations on a series of half-Heusler semiconductors, including NbCoSn, ZrCoSb, TaFeSb and NbFeSb, to better
understand their electronic properties and general composition-dependent trends. These materials are of interest as potentially high efficiency thermoelectric materials. Compared to the other materials, we find that ZrCoSb tends to have a relatively large amount of local disorder, apparently antisite defects. This contributes to a small excitation gap corresponding to an impurity band near the band edge. In NbCoSn and TaFeSb, Curie-Weiss-type behavior is revealed, which indicates a small density of interacting paramagnetic defects. Very large paramagnetic chemical shifts are observed associated with a Van Vleck mechanism due to closely spaced $d$ bands splitting between the conduction and valence bands. Meanwhile, DFT methods were generally successful in reproducing the chemical shift trend for these half-Heusler materials, and we identify an enhancement of the larger-magnitude shifts, which we connect to electron interaction effects. The general trend is connected to changes in $d$-electron hybridization across the series.
We report $^{93}$Nb and $^{121}$Sb NMR and $^{57}$Fe M{o}ssbauer studies combined with DFT calculations of Nb$_{1-x}$Ti$_x$FeSb ($0leqslant x leqslant0.3$), one of the most promising thermoelectric systems for applications above 1000 K. These studies
provide local information about defects and electronic configurations in these heavily $p$-type materials. The NMR spin-lattice relaxation rate provides a measure of states within the valence band. With increasing $x$, changes of relaxation rate vs carrier concentration for different substitution fractions indicate the importance of resonant levels which do not contribute to charge transport. The local paramagnetic susceptibility is significantly larger than expected based on DFT calculations, which we discuss in terms of an enhancement of the susceptibility due to a Coulomb enhancement mechanism. The M{o}ssbauer spectra of Ti-substituted samples show small departures from a binomial distribution of substituted atoms, while for unsubstituted $p$-type NbFeSb, the amplitude of a M{o}ssbauer satellite peak increases vs temperature, a measure of the $T$-dependent charging of a population of defects residing about 30 meV above the valence band edge, indicative of an impurity band at this location.
We report $^{125}$Te NMR measurements of the topological quantum material ZrTe$_5$. Spin-lattice relaxation results, well-explained by a theoretical model of Dirac electron systems, reveal that the topological characteristic of ZrTe$_5$ is $T$-depend
ent, changing from weak topological insulator to strong topological insulator as temperature increases. Electronic structure calculations confirm this ordering, the reverse of what has been proposed. NMR results demonstrate a gapless Dirac semimetal state occurring at a Lifshitz transition temperature, $T_c=85$ K in our crystals. We demonstrate that the changes in NMR shift at $T_c$ also provide direct evidence of band inversion when the topological phase transition occurs.
