Electron localization near Mott transition in organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}]$Br

The effect of disorder on the electronic properties near the Mott transition is studied in an organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is systematically irradiated by X-ray. We observe that X-ray irradiation causes Anderson-type electron localization due to molecular disorder. The resistivity at low temperatures demonstrates variable range hopping conduction with Coulomb interaction. The experimental results show clearly that the electron localization by disorder is enhanced by the Coulomb interaction near the Mott transition.

Optical probe of carrier doping by X-ray irradiation in organic dimer Mott insulator $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}]$Cl

We investigated the infrared optical spectra of an organic dimer Mott insulator $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the mid-infrared region, where interband transitions in the dimer and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this caused the Mott gap to collapse. The increase of the Drude part indicates a carrier doping into the Mott insulator due to irradiation defects. The strong redistribution of the spectral weight demonstrates that the organic Mott insulator is very close to the phase border of the bandwidth-controlled Mott transition.

Mott transition and superconductivity in the strongly correlated organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}]$Br

The magnetic field effect on the phase diagram of the organic Mott system $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br in which the bandwidth was tuned by the substitution of deuterated molecules was studied by means of the resistivity measurements performed in magnetic fields. The lower critical point of the first-order Mott transition, which ended on the upper critical field $H_{rm c2}$-temperature plane of the superconductivity, was determined experimentally in addition to the previously observed upper critical end point. The lower critical end point moved to a lower temperature with the suppression of $T_{rm c}$ in magnetic fields and the Mott transition recognized so far as the $S$-shaped curve reached $T =$ 0 when $H > H_{rm c2}$ in the end.

X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $kappa$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $kappa$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.