We show that pristine MoS$_2$ single layer (SL) exhibits two bandgaps $E_{gparallel}=1.9$ eV and $E_{gperp}=3.2$ eV for the optical in-plane and out-of-plane susceptibilities $chi_parallel$ and $chi_perp$, respectively. In particular, we show that od
d states bound to vacancy defects (VDs) lead to resonances in $chi_perp$ inside $E_{gperp}$ in MoS$_2$ SL with VDs. We use density functional theory, the tight-binding model, and the Dirac equation to study MoS$_2$ SL with three types of VDs: (i) Mo-vacancy, (ii) S$_2$-vacancy, and (iii) 3$times$MoS$_2$ quantum antidot. The resulting optical spectra identify and characterize the VDs.
We propose a two-dimensional Hong-Ou-Mandel (HOM) type interference experiment for Weyl fermions in graphene and 3D topological insulators. Since Weyl fermions exhibit linear dispersion, similar to photons in vacuum, they can be used to obtain the HO
M interference intensity pattern as a function of the delay time between two Weyl fermions. We show that while the Coulomb interaction leads to a significant change in the angle dependence of the tunneling of two identical Weyl fermions incident from opposite sides of a potential barrier, it does not affect the HOM interference pattern, in contrast to previous expectations. We apply our formalism to develop a Weyl fermion beam-splitter (BS) for controlling the transmission and reflection coefficients. We calculate the resulting time-resolved correlation function for two identical Weyl fermions scattering off the BS.
By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching,
accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct to indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.
We analyze possible nonlinear exciton-exciton correlation effects in the optical response of semiconductors by using a time-dependent density-functional theory (TDDFT) approach. For this purpose, we derive the nonlinear (third-order) TDDFT equation f
or the excitonic polarization. In this equation, the nonlinear time-dependent effects are described by the time-dependent (non-adiabatic) part of the effective exciton-exciton interaction, which depends on the exchange-correlation (XC) kernel. We apply the approach to study the nonlinear optical response of a GaAs quantum well. In particular, we calculate the 2D Fourier spectra of the system and compare it with experimental data. We find that it is necessary to use a non-adiabatic XC kernel to describe excitonic bound states - biexcitons, which are formed due to the retarded TDDFT exciton-exciton interaction.
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electron
s dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature.
We show that many-body correlations among excitons originating from the Pauli exclusion principle in a quantum well embedded inside a microcavity provide a possibility to produce pairs of entangled photons by ultrashort laser pulses with a yield of $
sim 10^{-2}$. The quantum-field theoretical two-particle density matrix in second quantization is used to calculate entanglement for arbitrary emission angles. %At time scales where the heavy-light hole splitting is resolved the resonances corresponding to different two-exciton %states develop, which allow for a simple kinematic theory relating the %states of the outgoing photons with the respective two-exciton states. Largest response can be expected at symmetric emission angles for resonances with the heavy-heavy and light-light two-exciton states with remarkably nontrivial dependence of entanglement on the emission angles and on the ellipticity parameters of the excitation. We show that the angle dependence can be tailored by means of the microcavity. Interestingly, the emitted entangled 2-photon states are always in a triplet state.
Non-perturbative phenomena in four-wave mixing spectra of semiconductors are studied using the exact solution of a widely used phenomenological non-linear equation of motion of the exciton polarization. It is shown that Coulomb interaction, included
in the nonlinearity, leads to two characteristic effects, which are essentially of dynamical origin, -- a split of the exciton peak and a non-monotonous dependence of the response at the exciton frequency on the magnitude of the external field. Relations between the spectral features and the parameters of the system is obtained. It is found that the transition from perturbative to non-perturbative regimes is controlled by parameters inversely proportional to the decay rate. It implies that the condition of low excitation density does not necessarily warrant applicability of the perturbational approach.
We studied the semiconductor response with respect to high intensity resonant excitation on short time scale when the contribution of the Fermi statistics of the electrons and holes prevails. We studied both the single and double pulse excitations. F
or the latter case we considered the time evolution of the multi-wave mixing exciton polarization. The main difference between the excitation by a single pulse or by two non-collinear pulses is that the Rabi oscillations of the multi-wave mixing response are characterized by two harmonics. Analyzing the operator dynamics governed by the external excitation we found that there are three invariant spin classes, which do not mix with the evolution of the system. Two classes correspond to the bright exciton states and one contains all dark states. We found that the dynamics of the classes is described by six frequencies and the Rabi frequencies are only two of them (one for each bright class). We discuss the effect of the dispersion of the electrons and holes and the Coulomb interaction describing the semiconductor by the semiconductor Bloch equation (SBE). We show that if initially the system is in the ground state then the SBE preserves the invariant spin classes thus proving absence of the dark excitons in the framework of this description. We found that due to the mass difference between holes of different kind additional Rabi frequencies, two of those present in the operator dynamics, should appear in the evolution of the exciton polarization.
