اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNon-perturbative phenomena in semiconductor four-wave mixing spectra
142
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Non-perturbative phenomena in four-wave mixing spectra of semiconductors are studied using the exact solution of a widely used phenomenological non-linear equation of motion of the exciton polarization. It is shown that Coulomb interaction, included in the nonlinearity, leads to two characteristic effects, which are essentially of dynamical origin, -- a split of the exciton peak and a non-monotonous dependence of the response at the exciton frequency on the magnitude of the external field. Relations between the spectral features and the parameters of the system is obtained. It is found that the transition from perturbative to non-perturbative regimes is controlled by parameters inversely proportional to the decay rate. It implies that the condition of low excitation density does not necessarily warrant applicability of the perturbational approach.
قيم البحث
اقرأ أيضاً
We studied the semiconductor response with respect to high intensity resonant excitation on short time scale when the contribution of the Fermi statistics of the electrons and holes prevails. We studied both the single and double pulse excitations. F
or the latter case we considered the time evolution of the multi-wave mixing exciton polarization. The main difference between the excitation by a single pulse or by two non-collinear pulses is that the Rabi oscillations of the multi-wave mixing response are characterized by two harmonics. Analyzing the operator dynamics governed by the external excitation we found that there are three invariant spin classes, which do not mix with the evolution of the system. Two classes correspond to the bright exciton states and one contains all dark states. We found that the dynamics of the classes is described by six frequencies and the Rabi frequencies are only two of them (one for each bright class). We discuss the effect of the dispersion of the electrons and holes and the Coulomb interaction describing the semiconductor by the semiconductor Bloch equation (SBE). We show that if initially the system is in the ground state then the SBE preserves the invariant spin classes thus proving absence of the dark excitons in the framework of this description. We found that due to the mass difference between holes of different kind additional Rabi frequencies, two of those present in the operator dynamics, should appear in the evolution of the exciton polarization.
In recent years the physics of two-dimensional semiconductors was revived by the discovery of the class of transition metal dichalcogenides. In these systems excitons dominate the optical response in the visible range and open many perspectives for n
onlinear spectroscopy. To describe the coherence and polarization dynamics of excitons after ultrafast excitation in these systems, we employ the Bloch equation model of a two-level system extended by a local field describing the exciton-exciton interaction. We calculate four-wave mixing signals and analyze the dependence of the temporal and spectral signals as a function of the delay between the exciting pulses. Exact analytical results obtained for the case of ultrafast ($delta$-shaped) pulses are compared to numerical solutions obtained for finite pulse durations. If two pulses are used to generate the nonlinear signal, characteristic spectral line splittings are restricted to short delays. When considering a three-pulse excitation the line splittings, induced by the local field effect, persist for long delays. All of the found features are instructively explained within the Bloch vector picture and we show how the exciton occupation dynamics govern the different four-wave mixing signals.
Based on a microscopic many-particle theory, we predict large optical gain in the probe and background-free four-wave mixing directions caused by excitonic instabilities in semiconductor quantum wells. For a single quantum well with radiative-decay l
imited dephasing in a typical pump-probe setup we discuss the microscopic driving mechanisms and polarization and frequency dependence of these instabilities.
We demonstrate a novel kind of polariton four wave mixing oscillation. Two pump polaritons scatter towards final states that emit two beams of equal intensity, separated both spatially and in polarization with respect to the pumps. The measurement of
the intensity fluctuations of the emitted light demonstrates that the final states are strongly correlated.
Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction due to the l
ateral strain relaxation in columnar geometry. We present further growth optimization and innovative characterization of MOCVD layers, overgrown on the columnar structure with varying diameter of colums. Nanoimprint lithography was applied to open circular holes of 250, 300, 450, 600 nm in diameter on the SiO2 layer, deposited on the GaN layer on c-plane sapphire template.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
