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We show that pristine MoS$_2$ single layer (SL) exhibits two bandgaps $E_{gparallel}=1.9$ eV and $E_{gperp}=3.2$ eV for the optical in-plane and out-of-plane susceptibilities $chi_parallel$ and $chi_perp$, respectively. In particular, we show that odd states bound to vacancy defects (VDs) lead to resonances in $chi_perp$ inside $E_{gperp}$ in MoS$_2$ SL with VDs. We use density functional theory, the tight-binding model, and the Dirac equation to study MoS$_2$ SL with three types of VDs: (i) Mo-vacancy, (ii) S$_2$-vacancy, and (iii) 3$times$MoS$_2$ quantum antidot. The resulting optical spectra identify and characterize the VDs.
Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizin
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged in
We study photoluminescence (PL) spectra and exciton dynamics of MoS$_2$ monolayer (ML) grown by the chemical vapor deposition technique. In addition to the usual direct A-exciton line we observe a low-energy line of bound excitons dominating the PL s
Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of
The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of th