In this paper the photon-assisted electron motion in a multiquantum well (MQW) semiconductor heterostructure in the presence of an electric field is investigated. The time-dependent Schrodinger equation is solved by using the split-operator technique
to determine the photocurrent generated by the electron movement through the biased MQW system. An analysis of the energy shifts in the photocurrent spectra reveals interesting features coming from the contributions of localized and extended states on the MQW system. The photocurrent signal is found to increase for certain values of electric field, leading to the analogue of the negative-conductance in resonant tunneling diodes. The origin of this enhancement is traced to the mixing of localized states in the QWs with those in the continuum. This mixing appears as anticrossings between the localized and extended states and the enhanced photocurrent can be related to the dynamically induced Landau-Zener-Stuckelberg-Majorana transition between two levels at the anticrossing.
We have theoretically investigated the tunneling current induced by a terahertz (THz) field applied to an asymmetric double quantum well. The excitation couples an initially localized state to a nearby continuum of extended states. We have shown that
the calculated current has similar features as those present in the optical spectra, such as interference effects due to the interaction between the continuum and the localized states, in addition to many-photon transition effects. The induced current is calculated as a function of the intensity of the THz field. A second THz field is used to yield non-linear processes, useful to control the interference effects. We believe that part of the issues studied here can be usefull for the integration of novel switching mechanisms based on optics (THz) and electronic current.
