We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well
reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the
implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.
We investigate the behavior of the dc voltage drop in a periodically driven double barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four terminal resistance $R_{4t}$ measured with the probes lo
cated outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result, valid beyond the adiabatic pumping regime, can be taken as an indication of the universal character of $R_{4t}$ as a measure of the resistive properties of a sample, irrespectively of the mechanism used to induce the transport.
We investigate the dc response of a 1D disordered ring coupled to a reservoir and driven by a magnetic flux with a linear dependence on time. We identify two regimes: (i) A localized or large length L regime, characterized by a dc conductance, g_{dc}
, whose probability distribution P(g_{dc}) is identical to the one exhibited by a 1D wire of the same length L and disorder strength placed in a Landauer setup. (ii) A multifloquet regime for small L and weak coupling to the reservoir, which exhibits large currents and conductances that can be g_{dc} > 1, in spite of the fact that the ring contains a single electronic transmission channel. The crossover length between the multifloquet to the single channel transport regime, L_c, is controlled by the coupling to the reservoir.
